本研究是以電漿輔助化學氣相沉積的方式來沉積有機矽膜薄膜，此電漿是利用軸向磁場，以提高濃度之Helicon電漿。在不同工作氣體(O2及N2O)、不同功率(200 W及300 W)及不同氣體比例R(0%~100%)下，鍍製有機矽膜，藉由薄膜的物理、光學及化學等特性，探討製成差異對薄膜的影響。
在研究結果顯示，當腔體內氧離子濃度越高，其有機矽膜內含碳量越少，折射率越低。藉由不同工作氣體(Ar和N2O)的含量以及不同電漿功率，可控制含碳量在(6 at% ~ 50 at%)之間。當氣體比例R = N2O/(N2O+Ar)降低時，有機矽膜之硬度趨近於0.3 GPa左右，接近於高分子材料PC、PET等基板。當氣體比例R提升時，薄膜特性逐漸趨向二氧化矽薄膜。以PET為基板之附著力測試結果發現，使用此鍍膜方法可鍍製出高附著力(ASTM 5B等級)之有機矽膜。

Helicon plasma source is one of the high-density plasma sources. SiOx thin films were deposited by PECVD with Helicon plasma source. Different ratios of N2O (or O2) and Ar gas mixture were used in the depositing processes. The optical properties, chemical bond properties, and microstructure of the films were examined and discussed.
The experimental results showed that, the refractive index and the content of carbon of the thin films decreased by increasing the gas ratio R, but hardness goes up by decreasing the gas ratio R. According to the result, the higher R caused the composition of film close to SiO2.In the Adhesion test on PET substrate¸ all samples of the classification of adhesion test result were 5B by using this experimental construction.

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