爲了發展在(100)矽基板上成長氮化鎵晶體的技術，本論文以V槽化(100)矽基板成長氮化鎵晶體，TEM選區繞射的結果在氮化鎵緩衝層中只有觀察到六方晶相的存在，磊晶層沒有超晶格(SPS)等複雜結構就能克服熱膨脹係數差異造成的巨觀龜裂。表示這個方法很有潛力推廣到大面積的(100)矽基板上使用，不只對於推動在(100)矽基板上成長高品質氮化鎵晶體的技術發展有貢獻，更能實現大面積生產氮化鎵基板這個夢想。
本論文除了深入觀察氮化鎵晶體在V槽中的成長過程、差排行為的演化以及晶相分佈，並提出差排隨著晶體成長的分佈模型，根據這個模型可利用二次成長的技術，有效將差排抑制在氮化鎵緩衝層的區域，進而在(100)矽基板上獲得高品質的氮化鎵晶體。亦針對semi-polar (10-11)平面的氮化鎵/氮化銦鎵多重量子井，進行光性上的觀察，定性分析壓電場的大小。實驗上可觀察到(10-11)平面相對(0001)平面有較小的壓電場。

Structural and optical characterization of GaN grown on V-grooved (100) Si by metal organic vapor phase epitaxy is carried out. The resultant GaN, which has a semi-polar (10-11) surface plane, can be grown with thickness over 1 ?m without any cracks in spite of the large tensile stress induced by the difference of thermal expansion coefficient between GaN and Si. Transmission electron microscopy (TEM) selected area diffraction of GaN indicates that partial strain is present around the GaN/Si interface region and strain is less at the surface region of GaN. Moreover, we propose a dislocation propagation model to explain the distribution of dislocations in the GaN epilayer. We have also investigated the optical properties of GaN/InGaN quantum wells grown on both the semi-polar (10-11) GaN and (0001) GaN. Power-dependent photoluminescence measurements show that the piezoelectric field in the quantum wells grown on the semi-polar plane is lower than its counterpart on the (0001) plan, but not significant.

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