摘要
實驗利用常壓熱化學氣相沉積(Thermal Chemical Vapor Deposition, Thermal CVD)成長橫向奈米碳管。配合I-line 微影技術，及金屬層蝕刻定義元件形狀。利用單因子實驗，設定不同操作參數，如製程溫度、乙烯在碳源中比例、甲烷流量、製程時間、不同載流氣體種類等，而得到數量、形貌、品質優良橫向奈米碳管，並結合微影
定義合成元件結構。並利用拉曼散射光譜(Raman Spectroscopy)分析，判定奈米碳管石墨化程度好壞。橫向奈米碳管元件利用I-V 電性量測分析，探討元件電性穩定性。並透過公式推算，計算元件電阻。由於元件成長橫向奈米碳管之催化劑為鎳金屬層，亦藉由本實驗設計結構，計算鎳金屬層和橫向奈米碳管之接觸電阻問題。
奈米碳管之物理特性廣受各界的期待，但由於成長定位方式，及製程相容之不成熟，故奈米碳管之應用產品仍在實驗階段。本次實驗成功利用不同製程參數，控制橫向奈米碳管的成長數量及品質。利用兼容IC 製程，配合微影定義元件形狀，傳統成長奈米碳管技術成長橫向奈米碳管。也由設計的元件結構合成橫向奈米碳管橋建元件，整
合元件之品質與穩定，對未來奈米碳管之定位與應用盡一分心力。

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