隨著微型發光二極體尺寸的減小，磊晶過程中產生之缺陷變得更加嚴重。這些缺陷導致載流子產生表面復合，導致載子無法復合於主動層。為了增強電洞注入效果，此研究加入了各種電洞加速層(Hole Accelerator)，此層提供額外動能使電洞穿過 p型電子阻擋層 (p-EBL)，使更多電洞進入多重量子井(Multiple Quantum Wells )與電子復合，從而使微發光二極體之內部量子效率提升。本研究使用COMSOL商業多重物理量模擬軟體之半導體模組來模擬元件之特性。通過增添電洞加速層，藉由材料於異質接面造成之極化電場，使元件內電洞速度提升，防止它們被困在缺陷能級中。此外，研究不同量子壁壘（Quantum barrier）之材料以提高低電流密度下微發光二極體之內部量子效率。

As the size of micro light-emitting diodes (μ-LEDs) decreases, the defects generated during the epitaxial growth process become more severe. These defects lead to surface recombination of charge carriers, preventing their recombination within the active layer. In order to enhance hole injection efficiency, this study introduces various hole accelerators, which provide additional kinetic energy to the holes to traverse the p-type Electron Blocking Layer (p-EBL). This enables more holes to enter the Multiple Quantum Wells (MQWs) and recombine with electrons, thereby improving the internal quantum efficiency of the μ-LEDs. The commercial multiphysics simulation software COMSOL's semiconductor module is utilized to simulate the characteristics of the device. By incorporating hole accelerators, the polarization electric field induced at the heterojunction enhances the hole velocity within the device, preventing them from being trapped in defect energy levels. Additionally, different materials for the quantum barriers are studied to improve the internal quantum efficiency of the micro-LED at low current densities.

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