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研究生： 林上偉
Shang-Wei Lin
論文名稱： 應用於單電子電晶體之矽/鍺量子點研製
Study of Forming Si/Ge Quantum dots for Single-Electron Devices
指導教授： 李佩雯
Pei-Wen Li
口試委員:
學位類別： 碩士
Master
系所名稱： 資訊電機學院 - 電機工程學系
Department of Electrical Engineering
畢業學年度： 92
語文別： 中文
論文頁數： 89
中文關鍵詞： 小線寬間隙壁自我對準技術 、庫倫震盪效應 、庫倫阻斷效應 、矽鍺 、量子點 、單電子電晶體
外文關鍵詞： Single-Electron Transistor(SET), Quantum dot, Coulomb blockade Effect, Narrow spacer self-alignment(NSSA)), Coulomb Oscillation Effcet
相關次數： 點閱：20  下載：0 
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    • 本論文之研究重點，在於發展可應用於矽基材單電子電晶體之量子點(線)的研製。有鑑於其他相關研究單位所發展的量子點製程，大都未考量製程中的穩定性、再現性、成本考量以及與現今半導體製程的相容性；故本論文將重點放在可相容於目前傳統的LSI製程，以及盡量提高製程的穩定性與再現性，並且降低製程的成本，發展出數種在傳統矽基材下可行的量子點(線)製作方式。

    In this thesis, the technique of forming Si & Ge quantum dots for Single-electron devices will be proposed. The advantages of the technique are well controllable, reproducible and compatible with traditional CMOS process.

    致謝…………………………………………………………………………….Ⅱ 圖目錄……………………………………………………………………….…Ⅲ 表目錄………………………………………………………………………….Ⅷ 論文結構概述………………………………………………………………….Ⅸ 第一章 研究動機 ………………………...……………………………………1 1-1 半導體發展趨勢………………………………………………………1 1-2 單電子電晶體的誕生…………………………………………………2 1-3 單電子電晶體的應用…………………………………………………5 1-4 單電子電晶體研究現況………………………………………………8 第二章 單電子電晶體動作原理………………...……………………………10 2-1 前言..…………………………………………………………………10 2-2 單電子電晶體動作基本條件……………………..…………………12 2-3 單電子電晶體之庫倫電荷效應…………………..…………………14 2-3-1 庫倫阻斷效應……………………………..…………………14 2-3-2 庫倫震盪效應……………………..…………………………16 2-3-3 微分導電係數等高線圖…..…………………………………19 第三章 鍺量子點的研製...……………………………………………………21 3-1 前言…..………………………………………………………………21 3-2 鍺量子點的研製介紹…..……………………………………………23 3-2-1 矽/鍺選擇性氧化…….………………………………………24 3-3 鍺量子點製作流程…..………………………………………………26 3-4 結果與討論…..………………………………………………………30 3-4-1 氧化時間(熱預算值)對鍺量子點的影響……………………30 3-4-2 鍺含量(x值)對鍺量子點的影響…….………………………33 3-5 鍺量子點應用於單電子電晶體之驗證…..…………………………37 第四章 矽量子線的研製…………………………………………………...…39 4-1 前言………………………………………………………………..…39 4-2 矽量子線的研製介紹……………………………………………..…43 4-2-1 小線寬間隙壁自我對準…………………………………..…43 4-2-2 矽非等向性濕蝕刻(TMAH)…..…………………....………..45 4-2-3 矽/氮化矽之選擇性氧化…………………….………………49 4-3 矽量子線結構製作流程……………………..………………………49 4-4 結果與討論…………………………………..………………………59 第五章 總結與未來展望……………………………...………………………69 參考文獻……………………………………………….………………………71

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