高介電常數TiOX/SiOX介電層製備低電壓場效應電晶體元件

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研究生：	楊柏宣 Bo-Xuan Yang
論文名稱：	高介電常數TiOX/SiOX介電層製備低電壓場效應電晶體元件 Low Voltage Field Effect Transistor Based on High Dielectric Constant Titanium Oxide/ Silicon Oxide Dielectric
指導教授：	劉振良 Cheng-Liang Liu
口試委員:
學位類別：	碩士 Master
系所名稱：	工學院 - 化學工程與材料工程學系 Department of Chemical & Materials Engineering
論文出版年：	2015
畢業學年度：	103
語文別：	中文
論文頁數：	104
中文關鍵詞：	高介電常數材料、有機場效應電晶體、溶液凝膠法
外文關鍵詞：	High-K material, OFET, Sol-gel
相關次數：	點閱：13 下載：0
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在本實驗中，十八烷基磷酸(octadecylphosphonic acid; ODPA)覆蓋高介電常數TiOX/SiOX和有機混成(hTSO)之介電層製備有機pentacene場效應電晶體。沉積自組裝單分子層後，厚度約為120 nm的hTSO介電層，並擁有145 nF cm-2的電容值、高介電常數(~20)及低漏電流(10-7 A cm-2)。本實驗將hTSO/ODPA混成介電層沉積pentacene製備有機場效應電晶體，其操作電壓低於-3.0 V，電流開關比超過104，閥值電壓小於-0.54 V，亞閥值斜率小於300 mv dec-1，遷移率達0.2 cm2 V-1 s-1。而在最後對其進行穩定性測試，hTSO介電層經過ODPA沉積後的電晶體具有良好的穩定性。
在本實驗中，以全溶液製程製備全透明之低電壓氧化鋅(ZnO)場效應電晶體。控制錫的摻雜濃度及退火溫度製備高導電度透明ITO並作為閘極。為了製備低成本之電子元件，溶液製程之ZnO薄膜被用來當作場效應電晶體之主動層。新退火溫度條件400 oC之hTSO 介電常數高達34。製備出以旋轉塗佈ITO閘極及具有高電容值旋轉塗佈hTSO介電層，並最後以噴塗法製備PEDOT:PSS作為源極及汲極製備全溶液製程且透明之ZnO場效應電晶體。結果顯示出有潛力作為高性能之全溶液製程且透明之ZnO場效應電晶體。

We reported on the fabrication of low-voltage operating pentacene-based organic thin film transistors (OTFTs), composted of a high k gate dielectric made from titanium-silicon oxide/organic hybrid materials(hTSO) covered with a long alkyl chain octadecylphosphonic acid(ODPA). 120 nm-thick hTSO hybrid dielectric provides high capacitance (145 nF cm-2), high k value (~20) and low leakage current density (10-7 A cm-2). Employing the appropriate hTSO/ODPA hybrid dielectric, pentacene based OTFTs operate under -3.0 V, on/off ratio above 104, threshold voltage below -0.54 V, subthreshold slopes as low as 300 mv dec-1, and mobilities as 0.2 cm2 V-1 s-1.
We reported low-voltage all solution-processable transparent ZnO-FETs. Controlling the Sn doping concentration and the annealing method/atmosphere enabled highly conductive transparent gate electrodes. Solution-processed ZnO thin films are attractive as active materials in field effect transistors (FETs) for low-cost electronic device applications. The electrical characteristics of 400 oC hTSO show a high dielectric constant of nearly 34. For the first time, all solution-processed fully transparent ZnO-FETs based on spin-coated ITO gate electrodes, hTSO gate dielectric layers with high capacitance and spray-coating PEDOT:PSS pattern electrodes were demonstrated. Our results suggest that solution-processable fully transparent oxide FETs have the potential for low-temperature and high-performance application in transparent.

摘要    i
Abstract    ii
誌謝    iv
目錄    v
圖目錄    xi
表目錄    xvi
第一章    緒論    1
1-1    前言    1
1-2    場效應電晶體    2
1-2-1    簡介    2
1-2-2    場效應電晶體原理及工作模式    2
1-2-3    電晶體元件結構    5
1-2-4    重要參數    7
1-2-4-1    載子遷移率(Mobility;" μ" )及閥值電壓(Threshold Voltage; Vth)    7
1-2-4-2    電流開關比(On/off ratio; Ion/Ioff)    8
1-2-4-3    亞閥值斜率(subthreshold Swing; S.S.)    8
1-2-4-4    電荷陷阱密度(Trap Density; Ntrap)    9
1-3    介電層材料及特性    9
1-3-1    介電常數(Dielectric Constant; k)    9
1-3-2    常用介電層介紹    10
1-3-3    漏電流(Leakage Current; J)    11
1-3-4    粗糙度(Roughness)    14
1-3-5    無機高介電常數介電層    15
1-3-6    有機介電層    16
1-3-7    介電層製備方法    18
1-3-7-1    原子層沉積法    18
1-3-7-2    濺鍍法    19
1-3-7-3    電漿氧化反應    20
1-3-7-4    陽極氧化法    21
1-3-7-5    溶液-凝膠法    22
1-3-7-6    有機介電層製備方式    26
1-3-8    自組裝單分子層與多層介電層    27
1-3-8-1    自組裝單分子層    27
1-3-8-2    多層介電層    30
1-4    Pentacene性質    31
1-5    噴塗法製備ZnO及其特性    32
1-6    研究動機    33
第二章    實驗    35
2-1    實驗材料及藥品    35
2-2    實驗儀器    36
2-2-1    製程儀器    36
2-2-2    分析儀器    36
2-3    介電層薄膜及半導體層物性分析    37
2-3-1    鍵結及元素分析    37
2-3-2    熱性質分析    38
2-3-3    接觸角及表面形態分析    38
2-3-4    電性分析及穩定性測試    39
2-4    實驗步驟    39
2-4-1    溶液-凝膠法合成TiOX/SiOX混成薄膜前驅物    39
2-4-2    反應機制    41
2-4-3    TiOX/SiOX混成薄膜製備pentacene薄膜電晶體    42
2-4-3-1    介電層薄膜製備    42
2-4-3-2    自組裝單分子層製備    42
2-4-3-3    元件製備    43
2-4-3-4    實驗流程    44
2-4-4    TiOX/SiOX混成薄膜製備透明ZnO薄膜電晶體    45
2-4-4-1    氧化銦錫(ITO)製備    45
2-4-4-2    介電層薄膜製備    45
2-4-4-3    ITO及ZnO反應機制    45
2-4-4-4    元件製備    46
2-4-4-5    實驗流程    48
第三章    TiOX/SiOX混成薄膜製備pentacene薄膜電晶體實驗結果與討論    49
3-1    熱重分析    49
3-2    傅立葉轉換紅外線光譜分析    50
3-3    X射線光電子能譜分析    51
3-4    接觸角分析    53
3-5    原子力顯微鏡分析    54
3-5-1    介電層表面形態    54
3-5-2    半導體層表面形態    55
3-6    漏電流及電容分析    55
3-6-1    漏電流分析    55
3-6-2    電容分析    56
3-7    電晶體電性分析    58
3-7-1    轉移特性曲線圖    58
3-7-2    輸出特性曲線圖    60
3-8    穩定性測試    61
第四章    TiOX/SiOX混成薄膜製備透明ZnO薄膜電晶體實驗結果與討論    63
4-1    熱重分析    63
4-2    傅立葉轉換紅外線光譜分析    64
4-3    X射線光電子能譜分析    66
4-4    氧化銦錫導電度量測    69
4-5    電容分析    69
4-6    電性量測    70
4-6-1    轉移特性曲線圖    70
4-6-2    輸出特性曲線圖    74
第五章    結論與未來展望    75
第六章    參考文獻    76

                                

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