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研究生: 吳居峰
Gen-feng Wu
論文名稱: 利用矩形及直角三角形模組來探討二維半導體元件模擬分析
2D Semiconductor Device Simulation with Right Rectangle and Triangle Elements
指導教授: 蔡曜聰
Yao-Tsung Tsai
口試委員:
學位類別: 碩士
Master
系所名稱: 資訊電機學院 - 電機工程學系
Department of Electrical Engineering
論文出版年: 2014
畢業學年度: 102
語文別: 中文
論文頁數: 58
中文關鍵詞: 矩形直角三角形模組二維半導體元件
外文關鍵詞: Right Rectangle, 2D
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  • 一般二維半導體元件模擬,為規則性排列的矩形方格所組成,例如20x20的方格,但矩形方格在圓弧接面上的精確度,往往有很大的受限。本論文中,我們改變原本規則性的排列組合網格模組,發展出不規則的矩形方塊排列,進一步開發出四個直角三角形的模組,我們運用這五種模組來滿足任意形狀的二維半導體元件模擬。此外為了證明網格的正確性,我們利用矩形網格與直角三角形網格來模擬電阻與PN二極體,並且與規則性排列網格做比較,驗證其結果會發現與規則性網格模擬完全相符。最後我們使用網格應用在MOS-Capacitor,然後在將模擬值與一般理論公式的臨限電壓做比較。


    A general two-dimensional simulation of semiconductor device is regularly arranged in rectangle meshes, such as the 20x20 rectangle meshes. However, the accuracy is limited when rectangle meshes are applied to the circular junction. In this thesis, we develop the four quadrants of right-angled triangle meshes to alter the grid into irregular arrangement. By these five types of mesh, we can fit any shapes of semiconductor device in the two-dimensional simulation. Furthermore, in order to verify the accuracy of this module, we use rectangle meshes and right-angled triangle meshes to simulate the resistors and PN diodes,, and it perfectly matches with the simulation result of regular grid arrangement. Finally, we apply this module to MOS-Capacitor simulation, and compare the simulation result with the theoretical result of threshold voltage.

    目錄 摘要..I ABSTRACTII 目錄III 圖目錄IV 表目錄 VI 第一章 緒論1 1-1 電路模擬與二維模擬元件環境介紹1 1-2 研究動機.2 第二章 矩形和直角三角形模組的建立與分析..4 2-1 矩形網格方程之建立4 2-2 任意三角形網格介紹.7 2-3直角三角形網格方程之建立10 第三章 驗證矩形與直角三角形模組的準確性19 3-1 矩形模組在二維的元件模擬與驗證.19 3-2 直角三角形模組在二維的元件模擬與驗證24 3-3 混合型模組在二維的元件模擬與驗證29 第四章 網格應用34 4-1 大小方形網格組合之問題探討34 4-2 方形網格應用於蛇型電阻40 4-3 方形網格應用於MOS-Capacitor43 第五章 結論46 參考文獻47

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