三維直角座標之小角度PN球接面崩潰模擬與分析｜國立中央大學博碩士論文系統

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研究生：	林信安 Hsin-An Lin
論文名稱：	三維直角座標之小角度PN球接面崩潰模擬與分析 Breakdown simulation of a spherical PN junction with a small-angle method in 3D rectangular coordinates
指導教授：	蔡曜聰 Yao-Tsung Tsai
口試委員:
學位類別：	碩士 Master
系所名稱：	資訊電機學院 - 電機工程學系在職專班 Executive Master of Electrical Engineering
畢業學年度：	100
語文別：	中文
論文頁數：	52
中文關鍵詞：	小角度、三維直角座標、PN球接面
外文關鍵詞：	small-angle method, spherical PN junction, 3D rectangular coordinates
相關次數：	點閱：16 下載：0
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於本篇論文中，主要探討如何改善既有的三維直角座標之P-N球接面模擬程式的電腦運算時間。我們利用了小角度的切割方式，將原本的元件，分成矽與二氧化矽兩個部份，其中矽是一小部分的體積，二氧化矽是滿足元件必須是長方體的填充物。如此一來，我們在最簡單的三維直角座標環境之下，可以將模擬的時間，改善到只需要原本的百分之一即可。然後，進一步的探討，經由改善之後的程式來模擬P-N接面的各種不同參數之設定，結果是合理的，證明了我們所開發的環境是沒有問題，具有參考價值的。

In this thesis, the major discussion is to improve the computer calculation time with the original simulation program in 3D rectangular coordinates. The small-angle method is used to divide the original silicon component into two parts. One is silicon region and the other is silicon-oxide region. The silicon region is inside the small-angle region, and we use the added silicon-oxide region to meet the simulation in 3D rectangular coordinates. Using this method, the simulation time is reduced to only one percent of the original. Further, the developed method is verified for its validity by the test with different parameters. So the small-angle method in 3D rectangular coordinates is workable and valuable.

摘要.........................................................................i
ABSTRACT....................................................................ii
目錄.......................................................................iii
圖目錄......................................................................iv
表目錄......................................................................vi
第一章 簡介..................................................................1
第二章 模擬架構與基本原理介紹................................................3
2-1. 逆向偏壓的崩潰特性..................................................3
2-2. 三維模擬架構........................................................5
2-3. 等效模擬電路........................................................7
2-4. 負載線於電路模擬中的重要性..........................................7
2-5. 牛頓-拉夫森疊代法(Newton-Raphson Method)...........................10
第三章 三維直角座標的小角度模擬.............................................14
3-1. 三維直角座標的P-N接面模擬..........................................14
3-2. 小角度的P-N接面模型開發之帶寬的說明................................16
3-3. 小角度的P-N接面模型開發............................................17
3-4. 小角度模擬.........................................................20
3-5. 最佳化小角度之探討.................................................27
第四章 小角度P-N接面崩潰特性分析............................................30
4-1. P-N接面相異濃度特性分析............................................30
4-2. P-N接面相異半徑特性分析........................................33
4-3. 絕緣層相異介電係數特性分析...................................35
第五章 結論.................................................................39
參考文獻....................................................................40

                                

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