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| 研究生： |
駱威諭 Wei-Yu Lo |
|---|---|
| 論文名稱： |
用光電化學方式對n型砷化鎵為基材之金半場效電晶體之特性改良 Characteristic improvement of MESFET with photoelectrochemical in n-GaAs substrate |
| 指導教授： |
李清庭
Ching-Ting Lee |
| 口試委員: | |
| 學位類別： |
碩士 Master |
| 系所名稱： |
理學院 - 光電科學與工程學系 Department of Optics and Photonics |
| 畢業學年度： | 91 |
| 語文別： | 中文 |
| 論文頁數： | 44 |
| 中文關鍵詞： | 光電化學 |
| 外文關鍵詞： | photoelectrochemical |
| 相關次數： | 點閱：13 下載：0 |
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近年來，具有直接能隙之III-V族半導體如砷化鎵因具有穩定性與均一性之特性，已成為元件的主流，而砷化鎵主要以金半場效電晶體元件為主，由於砷化鎵表面能態問題，造成汲極的電流減少，故本論文主要利用光電化學（photoelectrochemistry, PEC）之技術針對金半場效電晶體元件的源-閘極及閘-汲極間的n型砷化鎵表面直接進行氧化，期望能利用氧化層達到有效降低元件之漏電流以及提高元件之崩潰電壓。
藉由製程實驗，元件的直流特性量測方面，元件尺寸其閘極長度為1.25um時，從IDS-VDS特性曲線中，發現元件在VDS=3.6V，VGS=0.76V，可得到最大互導值為213mS/mm，而元件的夾止電壓為-2.5V，閘極到源極的崩潰電壓為-11.5V；元件尺寸其閘極長度為5um時，從IDS-VDS特性曲線中，發現元件在VDS=3.6V，VGS=0.1V，可得到最大互導值為98.6mS/mm，而元件的夾止電壓為-2.5V，閘極到源極的崩潰電壓為-11V。
用PEC方式成長氧化層於元件上，做為鈍化層，在閘極與源極之間的漏電流有變小且崩潰電壓已達到-39.4V，最後，對氧化層做熱處理，隨著熱處理溫度的提升相對地漏電流也繼續降低且崩潰電壓降至-41V。
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