本論文主要是針對磷化銦鎵/砷化鎵異質接面雙極性電晶體(InGaP/GaAs HBT)，利用低介電係數材料(如polyimide與BCB)做為元件的鈍化層，觀察此兩種低介電係數材料對異質接面雙極性電晶體基極表面復合電流的抑制能力，及在高溫下對元件特性的影響，並使元件操作在高集極電流下觀察元件特性的變化，以進一步了解此兩種鈍化層的優劣。此外我們亦使用emitter ledge製程來探討不同鈍化層材料對元件高頻特性的影響，我們選擇的鈍化能力與散熱能力皆不錯的SiC及上述兩種低介電係數材料做為研究的對象。
研究結果發現在所使用的兩種低介電係數材料中，polyimide對於基極表面復合電流的效果較佳，而BCB則擁有較佳的散熱性，此外這兩種低介電係數的鈍化層材料亦擁有較佳的高頻特性。

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