在本論文中，我們利用磷化銦基板之磊晶片製做PIN結構的Mesa-type光偵測器，並使用硫化銨((NH4) 2Sx) 溶液進行元件表面之處理，並進一步探討硫化技術對元件特性之影響。在論文中元件經硫化處理後，展現出良好的元件特性，如低漏電流、低電容及較佳的高頻特性。為了阻絕漏電流，我們更進一步使用氮化矽(SiN)加上二氧化矽(SiO2)之複合膜。計算、量測並分析I-V及C-V的趨勢和眼圖特性。
與平面結構相比，高台型結構的優點是寄生電容較小，因為在製造過程中除去元件周圍的寄生區域。因此在同樣收光面積下，高台型結構具有較低的電容值。
首先，我們探討利用硫化銨溶液，在磷化銦所製做之光偵測器上進行表面鈍化處理，研究其對元件特性所造成的影響，並將其結果與未進行硫化處理之元件做比較。從實驗結果我們得知，磷化銦表面在經過硫化處理之後，除了能去除表面原生氧化層之外，更能夠在半導體表面形成硫鍵結物防止表面再度氧化，也因此能有效減少表面鍵結電荷及相對應的電容，暗電流於 -10 V時由 6.46×10-11 A降為4.56×10-11 A，電容值在電壓為0V時由0.534 pF減少至0.313 pF；在偏壓-5V時由0.294 pF減少至0.169 pF。因此，經過硫化處理之元件具有較佳的電特性。
另一方面，為了更有效的提高元件性能，我們利用氮化矽(SiN)具有良好階梯覆蓋性，與二氧化矽(SiO2)能夠成長到一定厚度而不龜裂的特性，將氮化矽疊上二氧化矽形成複合膜鈍化層，並與單層之氮化矽鈍化層做電性比較。若使用硫化銨((NH4)2Sx) 溶液對元件做硫化處理後，暗電流於 -10 V時則由4.56×10-11 A降至2.37×10-11 A；電容值在電壓為0 V時由0.495 pF減少至0.313 pF；在偏壓-5 V時由0.268 pF減少至0.169 pF。驗證複合膜能有效結合兩種材料之優點，更有效的提升元件性能。而元件總電容在偏壓-5V時由0.294 pF減少至0.169 pF，且在眼圖中驗證所製作之元件資料傳輸都能達到12.5Gbit/sec且清楚的看到眼圖(無誤碼)。

In this paper, we use the epitaxy wafer of InP Substrates to make the PIN structure of the Mesa-type light detector, and the surface of the element was treated with a solution of ammonium sulfide ((NH4) 2Sx), to further explore the effect of Vulcanization characteristics on the characteristics of the element.. After the element in the paper by vulcanization treatment, showing some good component characteristics, such as low leakage current, low capacitance and better high frequency characteristics. In order to block the leakage current, we further use silicon nitride (SiN) plus silicon dioxide (SiO2) multilayer passivatio. Calculate, measure and analyze trends and eye pattern of I-V and C-V.
Compared with the planar structure, the advantages of mesa-type structure are low parasitic capacitance, because the parasitic area around the element is removed during the manufacturing process. So in the same light area, the mesa-type structure has a lower capacitance value.
First of all, we explore the use of ammonium sulfide solution, made of indium phosphide light detector on the surface passivation treatment, to study its effect on component characteristics, and to compare the results with those without vulcanization. From the experimental results we know that the surface of indium phosphide after vulcanization treatment, in addition to remove the original oxide layer of the surface,
the abler to form a sulfur bond on the surface of the semiconductor to prevent re-oxidation, and therefore can effectively reduce the surface bonding Charge and the corresponding capacitance. When the dark current is reduced from 6.46 × 10-11 A to 4.56 × 10-11 A at -10 V, the capacitance value is reduced from 0.534 pF to 0.313 pF at a voltage of 0 V; reduced from 0.294 pF to 0.169 at bias -5V PF. Thus, the vulcanized element has better electrical characteristics.

On the other hand, in order to more effectively block the leakage current, we use silicon nitride (SiN) has a good ladder coverage, and silicon dioxide (SiO2) has the characteristics which can grow to a certain thickness without cracking, the silicon nitride superimposed on silicon dioxide is formed into a multilayer passivatio passivation layer and is compared with a single layer of silicon nitride passivation layer.
If the element is treated with ammonium sulfide ((NH4) 2Sx) solution, the dark current is reduced from 4.56 × 10-11 A to 2.37 × 10-11A at -10 V. It is proved that the multilayer passivatio can effectively combine the advantages of the two materials and effectively block the leakage current. And in the eye pattern to verify the production of the element data transmission can reach 12.5Gbit / sec and clearly see the eye pattern (no error).

[1] H. J. R. Dutton, Understanding Optical Communications, IBM, 1998
[2] P. Chakrabarti, Optical Fiber Communication, 2015
[3] 李揚漢等編著，光纖通信網路Optical Communication Networks，五南出版社, 2007
[4] Jeong-Ju Yoo , et al. “A WDM-Ethernet hybrid passive optical network architecture”;IEEE Advanced Communication Technology, 2006
[5] https://www.fiberoptictel.com/difference-between-gpon-and-epon-ii/
[6] FS.COM, “Comparison of EPON and GPON”, 2015
[7] 朱洪，下一代PON技术打造Gigaband千兆全光网络，中国通信网，2016
[8] http://hyperphysics.phy-astr.gsu.edu/hbase/solids/pnjun.html
[9] https://www.coursehero.com/file/8285990/Lect12-photodiode-detectors
[10] Z. Z. Bandic, et al. “High voltage (450 V) GaN Schottky rectifiers”, Appl. Phys. Lett., Vol.74, pp.1266, 1999
[11] J. W. Johnson, et al. “Breakdown Voltage and Reverse Recovery Characteristics of Free-Standing GaN Schottky Rectifiers”, IEEE Transactions on Electron Devices, 2002
[12] 汪建民，材料分析，中國材料科學學會，2001
[13] https://en.wikipedia.org/wiki/File:Stylus_Instrument.svg
[14] A. P. Zhang, et al. “Vertical and lateral GaN rectifiers on free-standing GaN substrates”, Appl. Phys. Lett., 2001
[15] J. Z. Zheng, D. Tan, P. Chew, and L. Chan, “Characterization and in-line control of UV-transparent silicon nitride films for passivation of FLASH devices”, Place of Publication: Austin, TX, USA Country of Publication: USA, 1996
[16] Lee, “Characterization of UV Transparent Films for FLASH devices,” DCMIC conference Feb. 25 2002.
[17] D. Haiping, et al. “Mechanisms of Plasma-Enhanced Silicon Nitride Deposition Using SiH4/N2 Mixture,” Journal of the Electrochemical Society, vol. 128, pp. 1555, 1981.
[18] K. Maeda and I. Umezu, “Atomic microstructure and electronic properties of a-SiNx:H deposited by radio frequency glow discharge,” Journal of Applied Physics, vol. 70, pp. 2745, 1991.
[19] Shreepad Karmalkar, “Mechanism of the reverse gate leakage in AlGaN/GaN high electron mobility transistors”, Appl. Phys. Lett., Vol.82, pp.3976, 2007
[20] P. W. Bohn and R. C. Manz, “a multiresponse factorial study of reactor parameters in plasma-enhanced CVD growth of amorphous-silicon nitride,” Journal of the Electrochemical Society, vol. 132, pp. 1981, 1985.
[21] Takuma Nanjo, “Effects of a thin Al layer insertion between AlGaN and Schottky gate on the AlGaN/GaN high electron mobility transistor characteristics”, Appl. Phys. Lett., Vol. 88, pp. 043503, 2006
[22] Junji Kotani, “Mechanism of surface conduction in the vicinity of Schottky gates on AlGaN/GaN heterostructures”, Appl. Phys. Lett., Vol.91, pp.093501, 2007
[23] E. J. Miller, “Reduction of reverse-bias leakage current in Schottky diodes on GaN grown by molecular-beam epitaxy using surface modification with an atomic force microscope”, Journal of applied Physics, Vol. 91, pp. 9821, 2002
[24] N. I. Kuznetsov, “Insulating GaN:Zn layers grown by hydride vapor phase epitaxy on SiC substrates”, Appl. Phys. Lett., Vol. 75, pp.3138, 1999
[25] J. B. Webb, “Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy”, Appl. Phys. Lett., Vol. 75, pp.953, 1999
[26] Sten Heikman, “Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition”, Appl. Phys. Lett., Vol. 81, pp.439, 2002