本研究利用化學水浴法(Chemical Bath Deposition； CBD)進行可見光光觸媒薄膜之製備，以ITO(Indium–Tin-Oxide)導電玻璃為基材，利用此種製程於基材表面先形成一層AgInS光觸媒薄膜，再利用氯化銅進行銅金屬摻雜。而本研究著重於提升半導體薄膜的光敏化效果，試著改變反應溶液pH值與反應時間之鍍膜參數，並將試片置於真空管狀爐中以300 oC燒結1小時。材料分析部分以X-ray繞射儀(XRD)判別薄膜的晶型結構，利用掃描式電子顯微鏡(SEM)來觀察薄膜表面形貌與元素之半定量分析；並利用電化學量測儀以三極式之方式量測光電流，探討光觸媒的成分組成對光電流之影響。

The visible-active Photocatalyst thin film of AgInS was deposition on ITO glass and doping Cu by CuCl2 solution by chemical bath deposition (CBD).
The research conditions was change the ph value and reaction time and anneal time of the reaction solution and elevation photo-active of the photocatalyst.
The material structure analysis by XRD and element analysis by scanning electron microscope (SEM) ；The photocurrent measurement by potentiostat and discussion the element compose by photocurrent effect of photocatalyst.

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