微型化被動對準式 4 通道 × 2.5 Gbps 光學連結模組之發射端研究

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研究生：	李佳祐 Chia-Yu Lee
論文名稱：	微型化被動對準式 4 通道 × 2.5 Gbps 光學連結模組之發射端研究 Research of Transmitting Part for Compact and Passive-Alignment 4-channel × 2.5 Gbps Optical Interconnect Module
指導教授：	伍茂仁 Mount-Learn Wu
口試委員:
學位類別：	碩士 Master
系所名稱：	理學院 - 光電科學與工程學系 Department of Optics and Photonics
畢業學年度：	97
語文別：	中文
論文頁數：	77
中文關鍵詞：	被動對準式、微型化、4 通道、2.5 Gbps 、光連結、發射端
外文關鍵詞：	Transmitter, Passive-Alignment, Optical Interconnect Module
相關次數：	點閱：19 下載：0
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本論文具體實現使用主動與被動光學元件整合至矽基微光學平台之光學連結技術，它可以作為板對板之光學連結應用。在架構上，矽基光連結發射端模組包含具單石化之矽基微45 度反射面、V型溝槽陣列、2.5 GHz高頻傳輸線、與金錫銲料，並利用混成構裝方式可利用被動對準之封裝技術，將面射型雷射、與多模態之光纖陣列以高精度的方式封裝整合。在1 × 1 cm2大小的發射端模組上具4 個信號傳輸通道，每通道速度可達2.5 Gbps；45 度微反射面深度為110 μm，其半導體製程誤差在6%之內；覆晶封裝製程之空間位移誤差於2 μm內，發射端模組之空間變異造成能量1 dB 損失時之光學準位容忍度為± 20 μm。光由面射型雷射發射經45 度微反射面後進入多模光纖的光耦合效率約為-6 dB，相鄰通道的串音雜訊準位在-50 dB以下。矽基光連結發射端模組在偏壓電流6 mA操作下，輸入2.5 Gbps (0.375Vp-p，PRBS 215-1)訊號之眼圖能通過OC-48 眼圖遮罩符合國際規範。

In this thesis, an optical interconnect technology serving as a board to board interconnect is realized by assembling active and passive optical devices on a silicon-optical bench (SiOB). The transmitter module based on SiOB includes a monolithic integration of silicon-based 45°
micro-reflector, V-groove arrays, high-frequency transmission lines of 2.5 GHz, and bonding pads with Au/Sn eutectic solder, as well as hybrid integration of VCSEL and fiber ribbon with compatibility to high precise passive alignment process. The size of transmitter module can be only 1 × 1 cm2 for the 4-channel interconnect. The depth of 45° micro-reflector reaches to 110 μm for providing -6 dB coupling efficiency from Vertical-Cavity Surface-Emitting Laser (VCSEL) to multi-mode fiber (MMF). Utilizing micro lithography and flip chip bonding processes, the process tolerance and VCSEL bonding accuracy are within 6 % and 2 μm, respectively, making sure the optical alignment tolerance within 20 μm and only 1 dB power variation. The performance of transmission lines of 2.5 GHz is experimentally demonstrated. The eye pattern was measured at circuit source 6 mA for 2.5Gbps PN-signal (15 bit).

摘要 ........................................................................................................................ i
Abstract ................................................................................................................. ii
目錄 ...................................................................................................................... iii
圖目錄 .................................................................................................................... v
表目錄 .................................................................................................................. ix
第一章 序論........................................................................................................ 1
1-1 前言 .......................................................................................................... 1
1-2 現行光學連結技術之分析與比較 .......................................................... 4
1-3 具矽基45 度微反射面之光學連結發射端模組之架構 ........................ 9
第二章 4 通道 × 2.5 Gbps 光學連結模組之發射端設計 ............................. 11
2-1 面射型雷射光電特性量測與發射端模組尺寸設計 ............................ 11
2-2 發射端模組之光學雜訊準位及串音分析 ............................................ 15
2-3 矽基微光學平台高頻傳輸線之設計分析 ............................................ 21
2-4 矽基微光學平台尺寸確認 .................................................................... 23
第三章 發射端模組之半導體製程開發與封裝 ............................................. 25
3-1 矽基微光學平台之製作 ........................................................................ 25
3-2 高頻傳輸線與矽基微光學平台之製程整合 ........................................ 33
3-2-1 45 度微反射面之金屬層製程 ........................................................ 33
3-2-2 單層共面高頻傳輸線製程 ............................................................. 35
3-2-3 矽基微光學平台高頻傳輸線特性量測 ......................................... 41
3-3 金錫合金之銲料層製程 ........................................................................ 43
3-4 覆晶封裝製程技術 ................................................................................ 47
3-5 帶狀光纖陣列與矽基微光學平台之封裝製程 .................................... 52
第四章 矽基光連接發射模組之量測 ............................................................. 55
4-1 矽基光連接發射模組光耦合效率與光學準位容忍度 ........................ 55
4-2 矽基光連接發射模組高頻訊號之串音準位與眼圖量測 .................... 59
第五章 結論與未來展望 ................................................................................. 62
參考文獻 .............................................................................................................. 65

                                

1. 蕭旭良, “運用於光學連結模組之矽基光學平台技術”, (中央
大學光電所碩士論文, 台灣, 2008)
2. 張育誠, “微型光學讀取頭之元件, (中央大學光電所碩士論文,
台灣, 2003)
3. I. Zubel, “Silicon anisotropic etching in alkaline solutions III:
On the possibility of spatial structures forming in the course of
Si(100) anisotropic etching in KOH and KOH+IPA solutions”,
Sensors and Actuators A: Physical, 84, p. 116-125,2000
4. I. Zubel, “Silicon anisotropic etching in alkaline solutions IV –
The effect of organic and inorganic agents on silicon nisotropic
etching process”, Sensors and Actuators A: Physical, 87, p.
163-171,2001
5. I. Zubel, “The effect of isopropyl alcohol on etching rate and
roughness of (100) Si surface etched in KOH and TMAH
solutions”, Sensors and Actuators A: Physical, 93, p.
138-147,2001
6. Hermann Oppermann, “Flip Chip Reliability of GaAs on Si
Thinfilm Substrates Using AuSn Solder Bumps”, Electronic
Components and Technology Conference, 2004. Proceedings.
54th , vol.1, no., pp. 49-57 Vol.1, 1-4 June 2004
7. Test methods and procedures for microelectronics, in standard
MILSTD227 883C, Method 2019, Aug. 1983.

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