應用功率結合變壓器技術於功率放大器暨寬頻E類功率放大器之研製

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研究生：	宋榮邦 Song Rongbang
論文名稱：	應用功率結合變壓器技術於功率放大器暨寬頻E類功率放大器之研製 The Implementations on Power Amplifier Using Power-Combining Transformer Techniqueand Broadband Class E Power Amplifiers
指導教授：	邱煥凱 Hwann-Kaeo Chiou
口試委員:
學位類別：	碩士 Master
系所名稱：	資訊電機學院 - 電機工程學系 Department of Electrical Engineering
畢業學年度：	99
語文別：	中文
論文頁數：	75
中文關鍵詞：	寬頻、功率結合變壓器、功率放大器
外文關鍵詞：	Power Amplifier, Power-Combining Transformer, Broadband
相關次數：	點閱：5 下載：0
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本論文在設計上分為兩部份，第一部份是以CMOS製程實現全積體化功率放大器為目標，使用功率結合變壓器技術達到大功率輸出之功率放大器。第二部份則以設計兩個寬頻E類功率放大器為目標，第一個電路為以CMOS製程實現應用電抗補償網路與負電容補償之寬頻E類功率放大器，第二個電路是以pHEMT製程實現應用雙諧振電抗補償網路之寬頻E類功率放大器。
各電路特性量測如下：第一部份以CMOS製程實現功率結合變壓器技術之功率放大器的電路，增益量測為14.3 dB，1-dB增益壓縮點輸出功率為20.2 dBm，飽和輸出功率為25.3 dBm，功率增進效率為24.2 %。而在第二部份，第一個是以CMOS製程實現應用電抗補償網路與負電容補償之寬頻E類功率放大器的電路，經量測結果顯示在1.6 - 3.4 GHz範圍內由小到高為，功率增益為8.9 - 12.5 dB，功率增進效率為14.4 - 33.7 %，1-dB增益壓縮點輸出功率為14.8 - 18.3 dBm，飽和輸出功率為18.4 - 22.5 dBm；第二個是以pHEMT製程實現應用雙諧振電抗補償網路之寬頻E類功率放大器的電路，量測結果顯示在4.5 - 6 GHz範圍內由小到高的結果為，功率增益為9.7 - 13.3 dB，功率增進效率為37.2 - 50.8 %，1-dB增益壓縮點輸出功率為17 - 19.1 dBm，飽和輸出功率為18.5 - 20.8 dBm。

This thesis studies two categories of power amplifiers which are fully integrated silicon-based power amplifiers using power-combing transformer technique and broadband Class-E power amplifiers. Two Class-E amplifiers were studied in this thesis. The first CMOS broadband Class-E power amplifier was designed by using a negative capacitance to compensate the reactance at the output. The second pHEMT broadband Class-E power amplifier was fulfilled by using dual resonant reactance compensation technique.
The measured results are summarized as follow, the CMOS power amplifier using power-combing transformer technique achieves a power gain of 14.3 dB, an output power at 1-dB gain compression point (P1dB) of 20.2 dBm, a saturation output power (Psat) of 25.3 dBm and a power-added efficiency (PAE) of 24.2 %. The CMOS broadband Class-E power amplifier using negative capacitance compensation technique achieves a bandwidth of 1.6 - 3.4 GHz, a power gain of 8.9 to 12.5 dB, a P1dB of 14.8 to 18.3 dBm, a Psat of 18.4 to 22.5 dBm and a PAE of 14.4 to 33.7 %. The pHEMT broadband Class-E power amplifier achieves a bandwidth of 4.5 - 6 GHz, a power gain of 9.7 to 13.3 dB, a P1dB of 17 to 19.1 dBm, a Psat of 18.5 to 20.8 dBm and a PAE of 37.2 to 50.8 %.

中文摘要........................................................................................................................ I
英文摘要....................................................................................................................... II
誌謝.............................................................................................................................. III
目錄.............................................................................................................................. IV
圖目錄.......................................................................................................................... VI
表目錄.......................................................................................................................... IX
第一章 緒論 ........................................................................................... 1
1-1 研究動機.................................................................................................... 1
1-2 研究成果.................................................................................................... 1
1-3 章節簡介.................................................................................................... 1
第二章 功率放大器 ............................................................................... 2
2-1 功率放大器簡介........................................................................................ 2
2-2 功率放大器分類........................................................................................ 5
第三章 應用功率結合變壓器技術之功率放大器 ............................... 9
3-1 文獻回顧.................................................................................................... 9
3-2 變壓器原理簡介...................................................................................... 10
3-3 應用功率結合變壓器技術之功率放大器.............................................. 14
3-4 電路量測結果與討論.............................................................................. 17
第四章 寬頻E類功率放大器設計 ..................................................... 28
4-1 文獻回顧.................................................................................................. 28
4-2 理想E類功率放大器簡介 ..................................................................... 29
4-3 應用電抗補償網路之寬頻E類功率放大器簡介 ................................. 32
V
4-3-1 電抗補償網路簡介與設計.......................................................... 32
4-3-2 雙諧振電抗補償網路簡介與設計.............................................. 34
4-4 應用電抗補償網路與負電容補償之CMOS寬頻E類功率放大器 .... 36
4-4-1 應用電抗補償網路與負電容補償之CMOS寬頻E類功率放大器 ......................................................................................................36
4-4-2 電路量測結果與討論.................................................................. 42
4-5 應用雙諧振電抗補償網路之pHEMT寬頻E類功率放大器研製 ...... 49
4-5-1 應用雙諧振電抗補償網路之pHEMT寬頻E類功率放大器 .. 49
4-5-2 電路量測結果與討論.................................................................. 53
第五章 結論與未來研究方向 ............................................................. 57
5-1 結論.......................................................................................................... 57
5-2 未來研究方向.......................................................................................... 58
參考文獻 ................................................................................................... 59

                                

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