石墨烯具有高電子遷移率、高導電性、高穿透性、高機械強度，利用於電子元件製備與透明導電膜研究上受到重視。目前大多使用多晶銅箔利用化學氣相沉積法來製備高品質石墨烯，而不同晶向之銅表面與石墨烯之晶格匹配度不一致，所生長石墨烯單晶會產生不同方向性，導致晶界接合處產生較大接合缺陷，阻礙了電子的傳導，並降低其導電特性。
本研究利用化學電鍍剝離法製備表面為銅(111)之銅箔，並利用化學氣相沉積法成長石墨烯，透過製備單一晶向銅箔，降低晶格匹配度所造成之缺陷來成長單一方向性之石墨烯單晶，減少邊界接合缺陷產生，並與目前化學氣相沉積法於多晶銅箔之表面形貌、片電阻、載子遷移率、光穿透率、拉曼訊號比較，證實有較佳之品質。並運用此方法製備石墨烯並轉移至軟性基板上，並進行撓曲度量測，驗證石墨烯比起現今透明導電膜有較佳之可撓性，使其能運用取代現今之透明導電薄膜。

Graphene is a two-dimensional material composed of carbon atoms arranged in a hexagonal atomic structure. Its advantages are very good transparency, conductivity, excellent mechanical properties and it can be bent arbitrarily. So it achieve a lot of attractions on the applications of the electronic element and the transparent conductive film researches. Many of high quality graphene processes are developed by chemical vapor deposition. However, the grain boundary defects occurred when graphene synthesized on the polycrystalline Cu foil. The polycrystalline Cu grains lead to the different orientation of graphene domains owing to the lattice constant mismatch.

In this study, the Cu (111) foil has been fabricated by the peel-off method. The graphene domains with a consistency of orientation were synthesized on the single crystal Cu (111) thin film by chemical vapor deposition. And the measurements are including sheet resistance, mobility, transmittance, Raman shift and prove the graphene has better quality. Then flexibility measurements has been applied. It shows a remarkable flexibility to compare with the flexible transparent conductive film (ITO).

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