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| 研究生： |
蕭秉昇 Ping-Sheng Hsiao |
|---|---|
| 論文名稱： |
二維異質接面半導體元件之開發與模擬 Development of 2D Heterojunction Semiconductor Model and Its Applications to Device Simulation |
| 指導教授： |
蔡曜聰
Yao-Tsung Tsai |
| 口試委員: | |
| 學位類別： |
碩士 Master |
| 系所名稱： |
資訊電機學院 - 電機工程學系 Department of Electrical Engineering |
| 論文出版年： | 2015 |
| 畢業學年度： | 103 |
| 語文別： | 中文 |
| 論文頁數： | 54 |
| 中文關鍵詞： | 異質接面 、網格電路模擬 、半導體 |
| 外文關鍵詞： | heterojunction, Semiconductor, Simulation |
| 相關次數： | 點閱：11 下載：0 |
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在本文中，我們開發的真空能階系統，E_0方法，去解決模擬2-D異質結構的半導體元件邊界條件上的問題。在過去，我們的程式是使用本質費米能階，E_fi，以其來計算載子濃度與電位電場情形。然而，E_fi這個方法在2D異質接面上有模擬的問題。所以發展了E_0系統去計算邊界條件並解決問題。而在之後的章節，我們去驗證E_0方法製作出的模型是否可行，藉由pN接面元件與理論討論。並探討陡變接面與漸變接面在模擬上的問題。最後，我們使用的方法E_0，做出HBT並模擬，且著重在能隙寬度對於電壓電流特性的比較。
In this thesis, we develop vacuum level system, E_0 method, for numerical 2-D heterojunction device simulation. In the past, our program use intrinsic Fermi level, E_fi, to calculate carrier concentration and potential. However, the E_fi modeling has problem in heterojunction. The E_0 method has been verified by a pN heterojunction. And discuss problems of simulation happened on abrupt. Finally, we use the E_0 method to compare HBT with BJT to discuss the electrical characteristics.
參考文獻
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[2] D. K. Cheng, Field and wave electromagnetics, 2nd ed. Addison-Wesley Publishing Company, Inc., 1989.
[3] C. L. Teng, “An equivalent circuit approach to mixed- level device and circuit Simulation,” Master Thesis, Institute of EE, NCU, 2007.
[4] S. F. Wang, “Comparison of One-dimensional and Two-dimensional Simulation in Bipolar Transistors,” Master Thesis, Institute of EE, NCU, 2000.
[5] D. L. Scharfetter, H.K Gummel, “Large-Signal Analysis of a Silicon Read Diode Oscillator,”IEEE Trans. Electron Device, vol. 16, Jan. 1969.
[6] H. C. Wu, “New Variables for AC Simulation of 1-D Semiconductor Devices,” Master Thesis, Institute of EE, NCU, 2007.
[7] H. L. Fang, “New Variables and Table Method for Carrier Calculation in Semiconductor,” Master Thesis, Institute of EE, NCU, 2007.
[8] D. A. Neamen, Semiconductor Physics & Devices, Ed., McGraw-Hill, pp. 355~363, 1997.
[9] W. Liu, Fundamentals of Ⅲ-Ⅴ Devices, HBTs, MESFETs and HFETs/HEMTs, John Wiley & Sons, Inc, pp.147~149, 1999.
