鈍角三角形的邊線向量與內部向量探討及其在二維元件模擬之應用

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研究生：	沈韋廷 Wei-ting Shen
論文名稱：	鈍角三角形的邊線向量與內部向量探討及其在二維元件模擬之應用 Finding internal vector from the edge vector in obtuse triangle element for 2D Semiconductor Device Simulation
指導教授：	蔡曜聰 Yao-Tsung Tsai
口試委員:
學位類別：	碩士 Master
系所名稱：	資訊電機學院 - 電機工程學系 Department of Electrical Engineering
論文出版年：	2016
畢業學年度：	104
語文別：	中文
論文頁數：	52
中文關鍵詞：	半導體模擬、二維
外文關鍵詞：	semiconductor simulation, two-dimensional
相關次數：	點閱：6 下載：0
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本篇論文中，我們利用C語言模擬半導體元件特性。發現在切割網格時會如果出現180°切角，這會造成模擬上的誤差，而為了減少這誤差產生，我們將180°切角切割成不同角度，其中會出現鈍角三角形網格，所以我們開發了鈍角三角形模組來解決這問題。先利用單一鈍角三角形模組驗證，再經由模擬電阻與實際電阻值比較，及二極體的模擬驗證來確保模擬的正確性，最後應用在包含鈍角三角形網格的相關應用，例如:MOS電容器、180°切角的改善、局部網格加密時會出現的180°切角問題，都不會造成過大的誤差，並且成功改善了鈍角三角形網格模擬上的誤差。

In this thesis, we use C language to simulate semiconductor device characteristics. We found that the 180°-angle mesh will cause simulation problem. It may have a triangle mesh with an obtuse angle if we divide the 180° angle into two angles. In order to simulate the obtuse triangle mesh, it’s necessary to develop an obtuse triangle model for 2D device simulation. The validity of a single obtuse triangle model is verified by numerical experiment. We simulate a resister and compare its result to the theoretical value. Finally, applying this obtuse model to many applications, such as MOS capacitor, 180°-angle problem, in mesh regrid.

摘要...............................................i
Abstract..........................................ii
圖目錄.............................................iv
表目錄.............................................vi
第一章 簡介.........................................1
第二章 二維鈍角三角形模組等效電路開發與驗證.............2
2.1 簡單網格分析概念.................................2
2.2 封閉面規劃及討論.................................3
2.2.1利用外心定義封閉面..............................3
2.2.2外心在鈍角三角形出現的問題.......................5
2.2.3利用重心定義封閉面..............................6
2.3 利用邊線電場求其內部電場..........................6
2.4 二維數值鈍角三角形驗證...........................12
2.4.1二維數值鈍角三角形內電場驗證.....................12
2.4.2二維數值鈍角三角形內電子流密度與電洞流密度驗證.....16
第三章 半導體元件特性模擬與驗證.......................21
3.1簡單電阻模擬與分析................................21
3.2簡單電阻模擬之外心與重心比較.......................23
3.3二極體接面特性模擬與討論...........................25
第四章 半導體元件應用與討論...........................30
4.1 MOS電容器特性模擬................................31
4.2 180°切角的改善...................................34
4.3 尺寸微縮時出現鈍角三角形問題.......................38
第五章 結論..........................................39
參考文獻.............................................40




                                

[1]D R. E. Bank and D. J. Rose, “Semiconductor device simulation,” IEEE Trans, Electron Devices vol. 30, no. 9, Sep. 1983.
[2]M. Bern, D. Eppstein, and J. Gilbert, “Provably good mesh generation,” J. Comput. System Sci., 48 (3) (1994), pp. 384–409
[3]D. A. Neamen, Semiconductor physics and devices, 3rd ed. McGraw-Hill Companies Inc., New York, 2003.
[4]R. E. Bank, D. J. Rose, and W. Fichtner, “Numerical methods for semiconductor device,” IEEE Trans, Electron Devices, vol. 30, no. 9, Sep. 1983.
[5]G. Garreton, L. Villablanca, N. Strecker, and W. Fichtner, “A new approach for 2-D mesh generation for complex device structures,” IEEE Numerical Modeling of Processes and Devices for Integrated Circuits, 1994.
[6]M. J. Zeng, “Development of Triangular element and its applications to arbitrary 2D Semiconductor device,” M. S. Thesis, Institute of EE, Nation Central University, Taiwan, Republic of China, 2014.
[7]M. B. Patil, “New discretization scheme for two-dimensional semiconductor device simulation on triangular grid,” IEEE Trans, Computer-Aided Design of Integrated Circuits and Systems, vol. 17, no. 11, pp. 1160-1165, Nov. 1998.
[8]Z. Z. Lin, “Development of Obtuse triangle element and its applications to 2D Semiconductor device,” M. S. Thesis, Institute of EE, Nation Central University, Taiwan, Republic of China, 2015.
[9]S. M. Sze and K. K. Ng, Physics of Semiconductor Devices, 3rd ed. John Wiley & Sons Inc., New Jersey, 2007.
[10]C. C. Hu, Modern Semiconductor Devices for Integrated Circuits, Pearson College Inc., London, 2010
[11]J. Cervenka, W. Wessner, and E. A. Ani, T. Grasser, “Generation of unstructured meshes for process and device simulation by means of partial differential equations,” IEEE Trans, Computer-Aided Design of Integrated Circuits and Systems, vol. 25, no. 10, Oct. 2006.
[12]D. J. Cummings, M. E. Law, S. Cea, and T. Linton, “Comparison of discretization methods for device simulation,” Proc. SISPAD, pp. 119-122, 2009.
[13]S. Micheletti, “Stabilized finite elements for semiconductor device simulation,” Comput & Visual Sci., vol. 3, pp. 177-183, 2001.
[14]S. Holst, A. Ju¨ngel, and P. Pietra, “Mixed finite-element discretization of the energy-transport model for semiconductors,” SIAM J. Sci. Comput. vol. 24, no. 6, pp. 2058–2075. 2003.
[15]S. Holst, A. Ju¨ngel, and P. Pietra, “An adaptive mixed scheme for energy-transport simulations of field-effect transistors,”SIAM J. Sci. Comput. vol. 27, no. 5, pp. 1689–1716. 2004.
[16]F. Rudolf, J. Weinbub, K. Rupp, A. Morhammer, and S. Selberherr, “Template-Based mesh generation for semiconductor devices,” Proc. SISPAD, pp. 217-220, 2014.
[17]M. Lundstrom, and J. Guo, “Nanoscale transistor: device physics, modeling, and simulation,” Springer, New York, 2006.
[18]C. C. Lin, and M. E. Law, “2-D mesh adaption and flux discretizations for dopant diffusion modeling,” IEEE Trans, Computer-Aided Design of Integrated Circuits and Systems, vol. 15, no. 2, Feb. 1996.
[19]R. Dang, K. Matsushita, and H. Hayashi, “A highly efficient adaptive mesh approach to semiconductor device simulation-application to impact ionization analysis,” IEEE Trans, Magnetics, vol. 27, no. 5, Sep. 1991.
[20]C. Heitzinger, A. Sheikholeslami, J. M. Park, and S. Selberherr, “A method for generating structurally aligned grids for semiconductor device simulation,” IEEE Trans, Computer-Aided Design of Integrated Circuits and Systems, vol. 24, no. 10, Oct. 2005.

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