簡易檢索 / 詳目顯示
| 研究生： |
范振中 Chang-Chung Fan |
|---|---|
| 論文名稱： |
磷化銦鎵/砷化鎵異質接面雙極性電晶體之研製及其集極調變對元件特性的影響 |
| 指導教授： |
辛裕明
Yue-Ming Hsin |
| 口試委員: | |
| 學位類別： |
碩士 Master |
| 系所名稱： |
資訊電機學院 - 電機工程學系 Department of Electrical Engineering |
| 畢業學年度： | 88 |
| 語文別： | 中文 |
| 論文頁數： | 63 |
| 中文關鍵詞： | 磷化銦鎵/砷化鎵 、異質接面雙極性電晶體 、集極調變 |
| 外文關鍵詞： | InGaP/GaAs, HBT, Collector Modulation |
| 相關次數： | 點閱：10 下載：0 |
| 分享至: |
| 查詢本校圖書館目錄 查詢臺灣博碩士論文知識加值系統 勘誤回報 |
[1] Fresina, M.T.; Hartmann, Q.J.; Thomas, S.; Ahmari, D.A.; Caruth, D.; Feng, M.; Stillman, G.E. “InGaP/GaAs HBT with novel layer structure for emitter ledge fabrication” Electron Device Meeting, pp. 207-210, 1996.
[2] N.Matine, M.W. Dvorak, C.R. Bolognesi, X. Xu, J.Hu, S.P. Watkins and M.L.W. Thewalt “Nearly ideal InP/GaAsSb/InP double heterojunction bipolar transistors with ballistically launched collector electrons” Electronics Letters , Vol. 34, pp1700-172, August 1998.
[3] Yue-Fei Yang, Chung-Chi Hsu, Edward S. Yang, Hai-Jiang Ou “A High-Frequency GaInP/GaAs Heterojunction Bipolar Transistror with Reduced Base-Collector Capacitance Using a Selective Buried Sub-Collector” IEEE Electron Device Letters, Vol. 17, NO.11, pp 531-533, Nov. 1996.
[4] W.L.Chen, H.F. Chau, M. Tutt, M. C. Ho, T. S. Kim, T. Henderson “High-Speed InGaP/GaAs HBT’s Using a Simple Collector Undercut Technique to Reduce Base-Collector Capacitance” IEEE Electron Device Letters, Vol.18, NO.7, pp 355-357, July 1997.
[5] Hyunchol Shin, Christoph Gaessler, Helmut Leier “Reduction of Base-Collector Capacitance in InP/InGaAs HBT’s Using a Novel Double Polyimide Planarization Process” IEEE Electorn Device Letters, Vol.19, NO.8, pp. 297-299, August 1998.
[6] Yoram Betser, Dan Ritter “Reduction of the Base-Collector Capacitance in InP/GaInAs Heterojunction Bipolar Transistors Due to Electron Velocity Modulation” IEEE Trans. Electron Devices, Vol. 46, NO. 4, pp. 628-633, April 1999.
[7] Beng-Chye Lye, P. A. Houston, Ho-Kwang Yow, C. C. Button “GaInP/AlGaAs/GaInP Double Heterojunction Bipolar Transistors with Zero Conduction Band Spike at the Collector” IEEE Trans. Electron Devices, Vol. 45, NO. 12, pp. 2417-2421, Dec. 1998.
[8] Nicola Bovolon, Rüdiger Schultheis, Jan-Erik Müller, Peter Zwicknagl, Enrico Zanoni “Theoretical and Experimental Investigation of the Collector-Emitter Offset Voltage of AlGaAs/GaAs Heterojunction Bipolar Transistors” IEEE Trans. Electron Devices, Vol. 46, NO.4, pp. 622-627, April 1999.
[9] Y.M. Hsin, P.M. Asbeck “Experimental I-V Characteristics of AlGaAs/GaAs and GaInP/GaAs (D)HBTs with Thin Base” Solid-State Electronics, V4-4/3, pp. 1-6, Dec. 1999.
[10] Osaake Nakajima, Koichi Nagata, Hiroshi Ito, Tadao Ishibashi, Takayuki, Sugeta “Emitter-Base Junction Size Effect on Current Gain Hfe of AlGaAs/GaAs Heterojunction Bipolar Transistors” JAP. Vol. 24, NO.8, pp. L596-L598 August, 1985.
[11] Y. F. Yang, C. C. Hsu, E. S. Yang “Surface Recombination Current in InGaP/ GaAs Heterostructure-Emitter Bipolar Transistors” IEEE Trans. Electron Devices, Vol. 41, No. 5, pp. 643-647, May 1994.
[12] David R. Pehlke, Dimitris Pavlidis “Evaluation of the Factors Determining HBT High-Frequency Performance by Direct Analysis of S-Parameter Data” IEEE Trans. Microwave Theory and Techniques, Vol. 40, NO. 12, pp. 2367-2373, Dec. 1992.
[13] Liou, J.J. “Reliability of AlGaAs/GaAs heterojunction bipolar transistors: an overview” IEEE Device, Circuit and System, pp. 14-21, 1998.
[14] Bashar, S.A.; Amin, F.A.; Rezazadeh, A.A.; Crouch, M.A. “Characteristics of AlGaAs/GaAs and InGaP/GaAs HBTs at high temperature” EDMO, pp. 126-131, 1996.
[15] Bahl, S.R.; Camnitz, L.H.; Houng, D.; Mierzwinski, M.; Turner, J.; Lefforge, G. “Reliability investigation of InGaP/GaAs heterojunction bipolar transistors” Electron Device Meeting, pp. 815-818, 1995
