摘要
本論文中利用中央大學微光電實驗室的化學氣相沉積系統，主要藉由調變SiH4 與GeH4氣體流量比、反應環境溫度，得以調控複晶矽鍺薄膜中的鍺含量，並利用材料分析方面的儀器，找出最佳的複晶矽鍺製程條件。建立屬於我們實驗室機台的資料，日後如需要特定的鍺莫耳含量，僅需做反應溫度的微調。我們不但完成最佳化製程條件，並且成功的利用潛伏期這個擾人的因素，控制GeH4氣體通入腔體的流量隨著沉積時間增加而增加，如此漸增式的製程，能直接在穿檖氧化層上沉積複晶矽鍺量子點，其大小約25nm密度約1010cm-2，可直接運用在未來浮點電晶體的研究。
另外，經由實際製作金氧半浮點電容，分裂為三個不同的氧化時間，試圖找出元件最佳的氧化條件，觀察其C-V量測圖形，我們觀察到很明顯的順時針磁滯現象。雖然並不是如我們所預期的，觀察到量子點儲存電子造成逆時針磁滯。現在實驗室己經完成N2O的擴充，接下來將利用N2O良好的修補缺陷特性，改善因為缺陷造成的磁滯現象。

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