通過具有單源室的熱蒸發方法製造Sn納米顆粒。 進行X射線衍射，利用晶體結構的表徵來確定生長的Sn納米顆粒的平均粒徑（樣品1和样品2分別為56nm和152nm）。 Sn的組成是使用通用結構分析系統（GSAS）程序分析X射線衍射圖案。
在我們的研究中，通過AC磁化率（χAC=χ'+iχ''）測量超導抗磁屏蔽效應。 磁化率χ'（T）的溫度依賴性可以用Scalapino的表達式來描述，該表達式允許提取超導轉變溫度。 樣品1和样品2的臨界溫度分別為3.8K和3.6K。
在磁化率χ'（H）曲線的場依賴性中可以看到自旋極化效應，其可以通過衍生Langevin函數來描述，樣品1和样品2都顯示出超導性和自旋極化。

Sn nanoparticles are fabricated by a thermal evaporated method with single source chamber. X-ray diffraction performed the characterization of the crystal structure is utilized to determine the mean particle diameter (sample 1 and sample 2 is 56 nm and 152 nm, respectively) of the Sn nanoparticle as grown. The composition of Sn is an analysis of the X-ray diffraction pattern using the General Structure Analysis System (GSAS) program.
In our study, the superconducting diamagnetic screening effect was measured through AC magnetic susceptibility (χ_AC=χ^'+iχ''). The temperature dependence of magnetic susceptibility χ'(T) can be described by Scalapino’s expression, which allows extracting the superconducting transition temperature. The critical temperature of sample 1 and sample 2 is 3.8 K and 3.6 K, respectively.
The spin polarization effects are seen in field dependence of the magnetic susceptibility χ'(H) curve, which can be described by derivative Langevin function, both of sample 1 and sample 2 revealing of superconductivity and spin polarization.

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