本研究中，利用高密度鍺量子點於矽基材上作為奈米遮罩以進行濕式選擇性蝕刻並製備出大面積矽基奈米尖端結構，蝕刻過程中，鍺奈米遮罩也緩慢地被縮小為尺寸更小之鍺核(Ge core)結構，其鍺量子點之尺寸也決定著所製備出之矽基奈米尖端結構之頂端尖度(apex sharpness)，其所製備出之矽基奈米尖端將有良好的抗反射性質及優異之場發射性質，且其矽基奈米尖端之高場發射增強因子是源於高密度奈米尖端結構及其頂端之尖度，其將有助於電子穿越能障發射至真空之能力。
此外，我們也利用了單層聚苯乙烯奈米球陣列為遮罩搭配反應性離子蝕刻(reactive ion etching)技術製作出高密度且有序之矽鍺奈米柱結構，其矽鍺奈米柱結構之形貌將可藉由蝕刻氣體之組成、蝕刻功率以及蝕刻時間來控制，其所製作出之高密度有序矽鍺奈米柱結構具有低反射率之特性以及特定波段之光致發光(photoluminescence)增強能力。
利用奈米球微影術(nanosphere lithography)搭配乾式蝕刻及鍺量子點遮罩之濕式蝕刻將成功的製備出各式各樣形貌之矽基或矽鍺奈米結構，再利用AFM、SEM及TEM等顯微鏡來觀察其形貌之改變，並量測此些奈米結構之場發射、光致發光及反射率等性質，以得知其奈米結構之形貌對於光電性質之影響。本研究之技術對於製作矽鍺奈米結構將是低成本且具高效率的。

In the present study, large-area Si nanotips were fabricated by selective chemical etching of self-assembled Ge quantum dots on Si. Taking advantage of the relatively low etching rate, high-density Ge dots act as virtual nanomasks for the underlying Si substrate. During selective chemical etching, Ge nanomasks shrink into the small Ge-core islands, which determine the apex sharpness of the resulting Si pyramidal tips. The Si pyramidal tips exhibited excellent antireflective and electron field emission characteristics compared to as-grown Ge islands. The high field enhancement factor of Si nanotips can be attributed to high tip density, nanoscale apex and the well controlled spacing between the nanostructures.
Besides, in our study, high-density ordered SiGe nanorods were fabricated by reactive ion etching of monolayer polystyrene arrays. The morphology of the SiGe nanorods were controlled by variation of gas composition, power and duration of the dry etching. The fabricated nanorods exhibited low reflectance at 300nm-2000nm and excellent photo- luminescence property.
By using nanosphere lithography with dry etching and wet etching of Ge masks, various morphologies of SiGe nanostructures were successfully fabricated. The morphology evolution, size and height of produced nanostructures have been investigated by AFM, SEM, TEM. We also measured field-emission, PL and reflectance properties of the nanostructures. The etching techniques in our study are really low-cost and efficient for fabricating various shapes of SiGe nanostructures.
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