在本篇論文中，我們將探討雙閘極金氧半場效電晶體的結構，而這結構有以下優
點:有效抑制短通道效應、低功率消耗、良好的閘極通道控制能力、較好的電流
驅動力、較低的通道漏電流以及接近理想的次臨限擺幅等。接著我們利用二維元
件模擬器探討雙閘極金氧半場效電晶體的元件特性，分析雙閘極與單閘極元件的
Id-Vg 曲線、單閘極與雙閘極在不同通道長度下的次臨限擺幅差異以及雙閘極元
件在不同體矽厚度下的漏電流。最後，利用臨限電壓公式驗證元件的開發是否正
確，再來探討改變各種參數對於元件的影響。

In this thesis, we will investigate the structure of the double-gate MOSFETs. This structure has the following advantages: better short channel effect, low power consumption, good gate-channel control capability, better current driving force, the lower channel leakage current and near ideal sub-threshold swing, etc. Then we design a 2-D device simulator to investigate the device characteristics of the double-gate MOSFET. We analyze the Id-Vg curves of the double gate and single-gate components, sub-threshold swing difference in the different channel length, and double-gate leakage current in the different thickness of the bulk silicon. Finally, we use the threshold voltage formula to verify the validity of the 2-D device simulator,and then analyze the impact of the various design parameters.

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