相較於傳統發光二極體(Light-emitting diode, LED)，微型發光二極體(micro LED)因具有高解析度、高對比、高色彩飽和度、反應速度快及壽命長等特性，逐漸成為未來發展的重點項目之一，其相關研究也隨之備受關注。Micro LED屬於結合多領域的科技產品，為此，於元件製造前若能有效的模擬其溫度分佈與效能，將有助於後續元件整體規畫，而能降低製造成本。
本論文目的為建立一套完整的可撓式micro-LED半導體特性與電熱耦合模擬模型，並藉由模擬結果與文獻之分析比較，以驗證模型。在此使用COMSOL軟體建構三維micro-LED模型，藉由設置幾何尺寸、各層材料參數及邊界條件，模擬micro-LED元件效率及溫度分佈。
本論文除模擬單一micro-LED元件之效率及電特性外，亦使用三牆結構以探討牆寬大小、基板導熱係數、基板厚度等參數對元件量子阱溫度的影響。由模擬結果得知:透過提升基板導熱係數、增大晶粒間的牆寬，以及增加元件基板的厚度皆可降低元件量子阱的溫度。

Compared with traditional light-emitting diodes (LEDs), micro light-emitting diodes (micro-LEDs) have the higher resolution, higher color saturation, longer lifetime, and a higher contrast ratio. Hence, this study will focus on micro-LED for more analyses on the overall chip-design to reduce the manufacturing costs.
The purpose of this research is to establish a complete model simulating semiconductor characteristics and the electro-thermal coupling effects for the flexible micro LEDs. The model is constructed via the simulation software, COMSOL. Furthermore, a three-wall structure is investigated via three parameters, including wall-spacing, thermal conductivity, and thickness of the substrate, to know their effects on the quantum-well temperature. According to the simulation results, the quantum-well temperature can be reduced by increasing the thermal conductivity of the substrate, the thickness of the substrate, and the wall-spacing.

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