本研究以助熔劑長晶法及高溫高壓水熱法合成四個矽酸銦Cs2KInF2Si4O10 (A1)、Cs2RbInF2Si4O10 (A2)、Cs3InF2Si4O10 (A3)、 CsKIn(OH)Si4O10 (B1) ，A系列為三個等結構之化合物。我們藉由單晶X光繞射方法解決此二系列化合物的晶體結構，改變反應條件以製備純的化合物，再利用粉末X光繞射分析確定樣品的純度，接著我們以固態核磁共振光譜、紅外線光譜分析以驗證單晶結構。
A系列化合物為新穎的矽酸銦，具有無機結構中少見的九員環孔洞。A系列化合物結構中的矽氧四面體以共角的方式互相連接，形成一具有四、八員環的二維矽酸鹽層，矽酸鹽層間，以InF2O4所形成的銦氟氧八面體共角連接形成一個三維的結構，在a軸方向存在著由七個矽氧四面體及兩個銦氟氧八面體所組成的九員環孔道。並將此化合物與文獻中具有九員環孔道之化合物做比較。
B1結構中矽氧四面體以共角的方式連接形成鋸齒狀的無限延伸鏈，結構中的銦氧八面體In(OH)2O4以對位的氫氧基共角連接形成無限延伸鏈，矽酸鹽無限延伸鏈再以共角的方式與銦氧八面體的無限延伸鏈連接，形成三維的結構。結構存在四員環及兩個六員環孔道。B1與文獻中Rb2YFSi4O10及K2In(OH)Si4O10具有類似結構。

We have used flux-growth method and high-temperature, high-pressure hydrothermal method to synthesize two series of indium silicates. The series A includes Cs2KInF2Si4O10 (A1), Cs2RbInF2Si4O10 (A2), Cs3InF2Si4O10 (A3), and the series B consists of CsKIn(OH)Si4O10 (B1). Optimal reaction conditions for the preparation of pure phases were found. The crystal structures were analyzed by single-crystal X-ray diffraction. The purity of each compound was confirmed by powder X-ray diffraction. These compounds were further characterized by solid-state NMR and infrared spectroscopy.
All compounds of series A adopt a new structure. The SiO4 tetrahedra are connected by sharing three corners to form puckered layers which contain four- and eight-membered rings. Adjacent silicate layers are connected by InF2O4 octahedra via four O atoms so that a 3D framework containing 9-ring channels parallel to the a-axis is formed, which are very rare in inorganic compound. The alkali metal cations are located in the channels.
The SiO4 tetrahedra of B1 series are connected by sharing corners to form infinite chains. The In(OH)2O4octahedra are connected by sharing corners via OH- and form infinite chains along the a direction. The silicate chains and indium oxide octahedral chains are connected together to form a 3D framework containing four- and six-membered rings. The structure of B1 is similar to those of Rb2YFSi4O10 and K2In(OH)Si4O10.

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