本論文分別對氟化物與氧化物薄膜作電漿處理的研究。第一部份的氟化物的研究中，我們對氟化鋁和氟化鑭薄膜進行不同氣體（氧氣、氬氣和CF4）的電漿處理，探討不同氣體電漿對於氟化鋁和氟化鑭薄膜在深紫外波段的光學特性、微觀結構以及成分分析的影響。實驗結果顯示，氟化鋁薄膜經過氧氣電漿處理後，在吸收上雖有略微增加，但折射率增加，並降低了表面粗糙度，而且在EDS成分分析中，也顯示氟化鋁薄膜中碳的含量減少；在氟化鑭薄膜方面，氧氣和CF4的電漿處理後，吸收都明顯增加，當通以直流電源來進行氬氣電漿處理時，薄膜表面轟擊出更多的孔隙，而穿透率之非均勻現象變為更明顯，並且折射率下降，粗糙度增大。
第二部分為對於氧化物的研究，我們選用二氧化鈦薄膜進行電漿處理。實驗中，電漿處理所使用的氣體分別為氬氣、氮氣加氬氣和氧氣三種氣體，除了探討電漿處理對於二氧化鈦薄膜其光學特性、微觀結構和成分與鍵結上的影響外，亦針對其光催化特性的差異做研究。實驗結果發現，在氬氣和氮氣加氬氣的電漿處理後，由於表面產生更多孔隙，使得接觸面積增加。另外氮氣電漿也有和薄膜表面的鈦鍵結的趨勢，使吸收波長由紫外光區往可見光區偏移，在光觸媒的特性表現上明顯的增進。

In this research, plasma treatment of various gases was implemented to influence the properties of fluoride (AlF3 and LaF3) and oxide (TiO2) thin films. The optical properties, surface modification and composition of thin films were analyzed in deep ultraviolet region. The results showed that the absorption and refractive index of aluminum fluoride thin films were increased. The surface roughness of films decreased as measure by atomic force microscope. The element of carbon in the films was reduced by EDS analysis. In lanthanum fluoride thin films, the absorption of thin films was increased after oxygen and CF4 plasma treatment. The inhomogeneous phenomenon of films was more obvious with using the D.C power source of argon plasma treatment.
In oxide thin films, different gases (argon、nitrogen and oxygen) plasma treatment for titanium dioxide thin films was researched. The optical characteristic, surface modification and chemical bonding state of thin films were analyzed. The photocatalytic activity of thin films was also evaluated. The absorption edge of the films shifted to visible light region after argon and nitrogen plasma treatment. Therefore, the photocatalytic activity of films is also advanced.

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