本論文主要進行鑽石半導體元件之文獻整理。鑽石擁有寬能隙、極 高的崩潰電場、載子遷移率和優良的熱性質，是作為功率和頻率元件 最理想的半導體材料。鑽石功率和頻率半導體元件主要以肖特基二極 體、肖特基 p-n 二極體、肖特基 p-i-n 二極體、硼摻雜通道型場效電晶 體、氫端鍵結表面通道型場效電晶體，以及 P 溝道型接面場效電晶體 為主。鑽石肖特基二極體、硼摻雜通道型場效電晶體和 P 溝道型接面 場效電晶體操作溫度可達 500°C。氫端鍵結表面通道型電晶體具有良好 的截止頻率與最大震盪頻率。然而鑽石半導體元件的發展一直受到各 種瓶頸，其中最主要的問題在於鑽石晶圓尺寸過小、晶體品質不佳以 及摻雜製程不易。目前只有 P 型鑽石半導體元件可以在室溫下運作， 尤其是以氫端鍵結表面通道型電晶體為大宗。

This thesis present a survey of diamond semiconductor devices. Diamond is considered to be the ultimate semiconductor for power and frequency devices due to its wide band-gap, high breakdown electric field, high carrier mobility, and superior thermal properties. Diamond power and frequency devices mainly focus on schottky diode, schottky p-n diode, schottky p-i-n diode, boron-doped channel FET, hydrogen-terminated surface channel FET and P channel JFET. Furthermore, the operating temperature of schottky diamond diode, boron-doped channel diamond FET and P channel diamond JFET can reach 500 °C , and hydrogen-terminated surface channel FET has excellent cutoff frequency and maximum oscillation frequency. However, the success of diamond-based semiconductor devices has been difficult due to critical challenges involved with small wafer size, poor quality of crystal and difficult on doping. So far, only P-type diamond semiconductor devices can be used in room temperature, especially hydrogen-terminated surface channel FETs.

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