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| 研究生： |
梁瀅龍 Ying-Lung Liang |
|---|---|
| 論文名稱： |
多晶矽和金屬閘極於二維金氧半場效電晶體模擬比較 Comparison Between Polysilicon and Metal Gate in 2D MOSFET Simulation |
| 指導教授： |
蔡曜聰
Yao-Tsung Tsai |
| 口試委員: | |
| 學位類別： |
碩士 Master |
| 系所名稱： |
資訊電機學院 - 電機工程學系 Department of Electrical Engineering |
| 論文出版年： | 2015 |
| 畢業學年度： | 103 |
| 語文別： | 中文 |
| 論文頁數： | 56 |
| 中文關鍵詞： | 矩形網格 、元件模擬 、金氧半場效電晶體 |
| 外文關鍵詞： | rectangular mesh, device simulation, MOSFET |
| 相關次數： | 點閱：10 下載：0 |
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本篇論文中，我們將帕松方程式及電流連續方程式，利用等效電路的方式來設計出二維網格數值元件模擬器，元件的模擬就變成了電路的模擬，不但可以用電路模擬器來做元件模擬，而且可以和一般電路結合，形成混階模擬，接著討論多晶矽閘極和金屬閘極的差異和優缺點，並利用多晶矽閘極模擬的結果和金屬閘極來做比較，最後，我們將討論的主題是用非白努力的電流表示方法，並比較非白努力方程式與傳統白努力方程式上的差異。
In this thesis, we use Poisson’s equation and continuity equations to design an equivalent circuit model for 2-D device simulation. The device simulation will be transformed into the circuit simulation. The simulation will become a mixed-level device and circuit simulation. We discuss the advantages and disadvantages between poly-Si gate and metal gate. And the simulation results of poly-Si gate will be compared with those of metal gate. Finally, the subject to be discussed is the non-Bernoulli equation for current expression. We will compare the Bernoulli method with non-Bernoulli method.
[1] M. A. Mahmud and S. Subrina, “A Two Dimensional Analytical Model of Drain to Source Current and Subthreshold Slope of a Triple Material Double Gate MOSFET,” IEEE ICECE Proc., Dec. 2014.
[2] G. M. Zhang, Y. K. Su, H. Y. Hsin, and Y. T. Tsai, “Double gate junctionless MOSFET simulation and comparison with analytical model,” IEEE RSM Proc., Sep. 2013.
[3] R. A. Jabr, M. Hamad, Y. M. Mohanna, “Newton-Raphson solution of Poisson's equation in a pn diode,” International Journal of Electrical Engineering Education, Vol. 44 Issue 1, p23, Jan. 2007.
[4] M. J. Zeng, ”Development of Triangular element and its applications to arbitrary 2D Semiconductor device,” M. S. Thesis, Institute of EE, National Central University, Taiwan, R.O.C, 2014.
[5] H. Craig Casey, Jr., Devices for integrated circuits : silicon and III-V compound semiconductor, John Wiley, Chapter 7, 1999.
[6] D. A. Neamen, Semiconductor physics and devices: Basic Principles, 4th ed., McGraw-Hill, Chapter 10, 2012.
[7] S. M. Sze and Kwok K Ng, Physics of semiconductor devices, 3rd ed., Wiley-Interscience, Chapter 6, 2007.
[8] C. C. Chang, S. J. Li, and Y. T. Tsai, “Two-dimensional Mixed-level Device and Circuit Simulation using a simple Band Matrix Solver,” in EDMS 2005, Kaohsiung, Taiwan, 2005.
[9] S. J. Li, “Semiconductor Device Simulation with Equivalent Circuit Model including Quantum Effect,” Ph.D. dissertation, Institute of EE, National Central University, Taiwan, R.O.C, 2007.
[10] C. W. Tsai, ”Surface Recombination Current and non-Bernoulli Equation for 2-D Semiconductor Device Simulation,” M. S. Thesis, Institute of EE, National Central University, Taiwan, R.O.C, 2009.
