| 研究生: |
蔡志維 Tsai-Chih Wei |
|---|---|
| 論文名稱: |
表面復合電流及非白努力方程式對於二維半導體數值分析之影響 Surface Recombination Current and non-Bernoulli Equation for 2-D Semiconductor Device Simulation |
| 指導教授: |
蔡曜聰
Yao-Tsung Tsai |
| 口試委員: | |
| 學位類別: |
碩士 Master |
| 系所名稱: |
資訊電機學院 - 電機工程學系 Department of Electrical Engineering |
| 畢業學年度: | 97 |
| 語文別: | 中文 |
| 論文頁數: | 44 |
| 中文關鍵詞: | 非白努力方程式 、表面復合效應 、白努力 |
| 外文關鍵詞: | Bernoulli function, surface recombination |
| 相關次數: | 點閱:13 下載:0 |
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在這篇論文中,我們使用Poisson’s equation以及continuity equations設計出包含表面復合模型的二維混階元件模擬器。藉由這模擬器,可探討元件內部載子復合的情形,以及相伴隨的載子運動效應,接著我們將此種方法建立到一般的元件上,來探討表面復合效應對於元件的影響,並且為了證明電流的影響如同我們所假設,我們也另外建立一個電流極座標表示法,最後我們將討論的一個主題是以non-Bernoulli的電流表示方法,即回歸最原始的漂移電流以及擴散電流,並比較Bernoulli與non-Bernoulli的優缺點。
In this paper, we use Poisson’s equation and continuity equations to design the surface recombination model for 2-D device simulator. Because this simulator is designed to include the surface carrier recombination, we develop this surface recombination model for p-n diode and BJT device. For proving the influence of surface recombination current, we also build a vector plot to describe the current flow. Finally the other subject to be discussed is the non-Bernoulli equation for current expression. The non-Bernoulli equation returns to the most primitive expression for drift current and diffusion current. We will compare the Bernoulli method and non-Bernoulli method.
參考文獻
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