以噴塗技術在不銹鋼基板上沉積氧化矽阻隔層應用於可撓式CIGS太陽電池之研究

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研究生：	曾千洧 Chien-wei Tseng
論文名稱：	以噴塗技術在不銹鋼基板上沉積氧化矽阻隔層應用於可撓式CIGS太陽電池之研究 Investigation of SiOx barrier layers deposited by spray technique for flexible CIGS solar cells on metallic substrates
指導教授：	利定東 Ting-tung Li
口試委員:
學位類別：	碩士 Master
系所名稱：	工學院 - 能源工程研究所 Graduate Institute of Energy Engineering
論文出版年：	2014
畢業學年度：	102
語文別：	中文
論文頁數：	107
中文關鍵詞：	噴霧裂解法、溶膠噴塗法、阻隔層薄膜、不銹鋼基板、銅銦鎵硒太陽電池
外文關鍵詞：	spray pyrolysis deposition, aerosol spraying, barriers, stainless steel substrate, CIGS solar cell
相關次數：	點閱：14 下載：0
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本研究使用噴霧裂解法及溶膠噴塗法在不銹鋼基板上沉積SiOx阻隔層薄膜，實驗在阻隔層上依序沉積鉬背電極與CIGS吸收層。噴霧裂解法及溶膠噴塗法由於其製程成本低與操作簡單等優點，故近年來以此技術製備薄膜的技術受到重視。氧化矽絕緣層性質研究包含阻擋雜質擴散、微結構、成分、鍵結與電性絕緣分析等。實驗以AFM量測材料表面形貌，並藉由SEM、TEM及XRD觀察阻隔層材料微結構特徵、尺寸大小和殘留應力分析等。材料鍵結與元素分析使用XPS作進一步探討。實驗結果證實以溶膠噴塗製備氧化矽薄膜且厚度為200 nm時即可獲得極佳之阻隔層材料並同時達到可撓式CIGS太陽電池各項需求。

In this study, SiOx layers were fabricated by spray pyrolysis deposition (SPD) and aerosol spraying as diffusion barriers between the stainless steel (SS) substrate (SUS430) and the molybdenum back contact layer in CuIn1-xGaxSe2 (CIGS) thin-film solar cells. SPD and aerosol spraying for SiOx layers are attractive processes for the deposition of thin films due to their low cost and controllable properties especially for solar cells on SS foils since a good barrier layer is required to prevent the Fe impurities (ions) defusing from SS substrate to the cells. The properties of SiOx barriers including thermal stability, microstructure content, electrical insulation and thickness of SiOx layers were investigated. The surface morphology and surface roughness were observed by scanning electron microscope and atomic force microscope. A transmission electron microscopy and X-ray diffractometer are adopted to measure the microstructural characteristics, grain size, and residual stresses of films. The chemical composition of the dielectric barriers was analyzed by X-ray photoelectron spectroscopy. The experimental results shows the specific thickness at 200 nm of SiOx layer will cause the absorber layer has the single chalcopyrite phase structure with (112) preferred orientation. The effects from the results revealed that the cells with a SiOx barrier layer fabricated by aerosol spraying provided a promising process in obtaining better CIGS cell performance.

摘要    I
Abstract    II
誌謝    III
目錄    IV
表目錄    VII
圖目錄    IX
第一章 緒論    1
1-1  前言    1
1-2  研究目的及方法    5
第二章 文獻整理及原理介紹    13
2-1  阻擋層(Barrier layer)    13
2-1-1噴塗法製備阻擋層薄膜    14
2-2  背電極(Back contact)    16
2-3  吸收層(Absorber layer)    16
第三章 實驗方法與設備    18
3-1  實驗流程及前驅物溶液    18
3-2  實驗步驟    19
3-2-1基板的製備    19
3-2-2絕緣層的製備    20
3-2-3 Mo背電極的製備    23
3-3  實驗設備及原理    23
3-3-1 X-ray繞射儀 (X-ray Diffractometer, XRD)    23
3-3-2表面輪廓儀(α-step)    24
3-3-3四點探針(Four point probe)    25
3-3-4原子力顯微鏡(Atomic force microscope)    25
3-3-5穿透式電子顯微鏡(Transmission electron microscope, TEM)    26
3-3-6光電子能譜儀(X-ray photoelectron spectroscopy, XPS)    26
3-3-7外力撓曲測試    26
3-3-8光學顯微鏡(OM)    27
3-3-9二流體噴塗設備    27
第四章 結果與討論    30
4-1  噴霧熱裂解法及溶膠噴塗法製備氧化矽薄膜    30
4-1-1噴霧熱裂解法及溶膠噴塗法噴塗霧化參數    30
4-1-2噴霧熱裂解法製備氧化矽薄膜    30
4-1-3溶膠噴塗法製備氧化矽薄膜    39
4-2  XPS分析    42
4-2-1壓力式噴塗沉積技術製備氧化矽薄膜參數調變    42
4-2-2 TEOS高溫噴塗熱裂解(A製程)    43
4-2-3 TEOS高溫噴塗熱裂解(B製程)    46
4-2-4 TEOS/TES高溫噴塗熱裂解(C製程)    49
4-2-5 TEOS/TES高溫噴塗熱裂解(D製程)    52
4-2-6溶膠噴塗法製備氧化矽薄膜(A製程)    55
4-2-7溶膠噴塗法製備氧化矽薄膜(B製程)    59
4-3  氧化矽之微結構分析    63
4-3-1 TEM    63
4-3-2 XRD    65
4-4  原子力顯微鏡(AFM)對於SiOx之表面粗糙度分析    67
4-5  鐵離子雜質熱擴散分析    76
4-6  SiOx/SS之基板撓曲分析    79
4-7  殘留應力分析    80
4-7-1 Mo背電極依據噴霧熱裂解法及溶膠噴塗法製備不同厚度之絕緣層殘留應力分析    80
4-7-2 CIGS吸收層依據溶膠噴塗法製備不同厚度之絕緣層殘留應力分析    83
第五章 結論    86
參考文獻    88

                                

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