開發低反射矽奈米表面結構製作技術並應用於多晶矽太陽能電池

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研究生：	林柏穎 Po-Ying Lin
論文名稱：	開發低反射矽奈米表面結構製作技術並應用於多晶矽太陽能電池 Development of antireflective silicon nanostructures for polycrystalline silicon solar cells
指導教授：	陳一塵 Chen-I Chen
口試委員:
學位類別：	碩士 Master
系所名稱：	工學院 - 材料科學與工程研究所 Graduate Institute of Materials Science & Engineering
論文出版年：	2015
畢業學年度：	103
語文別：	中文
論文頁數：	69
中文關鍵詞：	多晶矽太陽能電池、粗糙化處理、濕蝕刻、反應式離子蝕刻
外文關鍵詞：	texture, multi-crystalline silicon, wet etching, reactive ion etching
相關次數：	點閱：14 下載：0
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多晶矽太陽能電池因為在成本與效能間的優異平衡下成為目前光伏產業中的主流產品。為了提升轉換效率，除了考量半導體材料本身的物理特性或材料內部缺陷等因素外，如何能夠最有效的利用電池所接收到的入射太陽光成為提升太陽能電池效能的重要課題。傳統上是以鹼金屬溶液對單晶矽太陽能電池進行表面粗糙化處理。但此蝕刻液會在多晶矽的晶界處發生裂縫與不理想的階梯狀結構使其抗反射效果不佳。此外由於晶面的選擇性蝕刻而產生外觀上的顏色不均勻則在商業應用上有美觀的疑慮。
因此本研究結合 HNO3/HF 濕蝕刻和 SF6/O2 反應式離子蝕刻 (RIE) 對多晶矽太陽能電池表面製備微米-奈米尺寸的抗反射結構。並藉由調整製成參數如：壓力、混和氣體比例和射頻功率以獲得具備外觀色澤均勻同時保有低反射率的最佳化蝕刻結構。相較於只以酸蝕刻進行粗糙化處理的標準試片，具有最佳化 RIE 織構的多晶矽太陽能電池其照光下的短路電流增加 2.04 (mA/cm2)。且由於光捕捉 (light trapping) 效應的貢獻使光電轉換效率提升 2.58%。

Multi-crystalline silicon (mc-Si) solar cells dominate PV manufacturing due to its excellent balance between cost and efficiency. The performance of mc-Si solar cells depends critically on the optical losses caused by the high reflectivity of c-Si wafers. In addition, the color difference on the grains with various crystalline orientations after alkali texturing causes aesthetic concerns in residential applications. At the first stage of this study, in order to obtain the optimized dimension of the structure, the simulation of surface textured was implemented by RCWA method. The textured mc-Si with micro-sized and nano-sized structures were fabricated using reactive ion etching (RIE) combined with wet chemical etching. A surface modification of mc-Si with low reflectivity and uniform color can be achieved by adjusting the etching parameters (e.g., pressure, gas mixture and RF power). Compared with the reference wet etching texture, mc-Si solar cell with optimized RIE textured was improved 2.04 (mA/cm2) in short current density. Conversion efficiency was enhanced 2.58%, since the contribution of excellent light trapping effect.

目錄
摘要..............................................................................................................................Ⅰ
Abstract........................................................................................................................Ⅱ
致謝..............................................................................................................................Ⅲ
目錄..............................................................................................................................Ⅵ
圖目錄..........................................................................................................................Ⅳ
表目錄..........................................................................................................................Ⅸ
第一章: 緒論................................................................................................................1
1-1 前言.................................................................................................................1
1-2 研究動機.........................................................................................................2
第二章: 文獻回顧.........................................................................................................3
2-1 矽基太陽能電池基本理論.................................................................................... 3
2-1-1太陽能光譜...................................................................................................3
2-1-2 太陽能電池之重要參數.............................................................................5
2-2抗反射技術..........................................................................................................11
2-2-1由下而上製成.............................................................................................12
2-2-2 由上而下製成...........................................................................................14
2-3太陽能電池之抗反射結構...................................................................................15
2-3-1 單晶矽之抗反射結構...............................................................................15
2-3-2多晶矽之抗反射結構................................................................................16
2-4反應式離子蝕刻....................................................................................................19
2-4-1 蝕刻原理...................................................................................................19
2-4-2 表面織化結構..........................................................................................20
2-5於多晶矽基板蝕刻微奈米結構技術的相關文獻整理.......................................21
2-6 嚴格耦合波理論..................................................................................................24
第三章 研究方法.....................................................................................................28
3-1反應式離子蝕刻實驗流程....................................................................................28
3-2 RCWA模擬流程....................................................................................................30
3-3 製備多晶矽之抗反射結構...................................................................................30
3-4製備多晶矽太陽能電池........................................................................................32
第四章 實驗結果與討論..........................................................................................34
4-1 反應式離子蝕刻...................................................................................................34
4-1-1 反應壓力之影響......................................................................................34
4-1-2 氣體混和比之影響..................................................................................37
4-1-3 射頻功率之影響.....................................................................................39
4-2 RCWA 模擬..........................................................................................................39
4-3 多晶矽上之抗反射結構........................................................................................43
4-4 不同抗反射結構對多矽太陽能電池太之性能比較............................................46
第五章 結論..............................................................................................................49
參考文獻....................................................................................................................50

                                

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