跳到主要內容

簡易檢索 / 詳目顯示

研究生: 許文杰
Wen-chieh Hsu
論文名稱: 大面積覆晶式氮化鎵發光二極體之研製與特性探討
Large Area GaN based flip-chip light emitting diode
指導教授: 綦振瀛
Jen-inn Chyi
口試委員:
學位類別: 碩士
Master
系所名稱: 資訊電機學院 - 電機工程學系
Department of Electrical Engineering
畢業學年度: 92
語文別: 中文
論文頁數: 65
中文關鍵詞: 氮化鎵發光二極體
外文關鍵詞: LED, GaN
相關次數: 點閱:4下載:0
分享至:
查詢本校圖書館目錄 查詢臺灣博碩士論文知識加值系統 勘誤回報
  • 在白光發光二極體照明的應用上,受限於氮化鎵晶粒的發光效率與螢光粉的轉換效率,目前白光二極體發光效率只有74 lm/W,尚不足以取代日常照明。為了提高發光亮度以及改善效率,在本論文中分別以大面積元件及覆晶式元件製程技術為研究之目標;應用大面積元件之技術可增加元件的操作電流,達到光能輸出增加的效果。同時為了增進元件在高操作電流下的效率表現,大面積發光二極體若配合覆晶之製程技術則可增加熱散逸的能力,減緩因熱累積而造成的效率下降。在本論文中主要針對發光二極體尺寸大型化時出現之電流擁塞現象及覆晶式元件反射電極之熱穩定性做研究探討,並提出改善之方案。最後結合上述兩項技術所製作的大面積覆晶式氮化鎵發光二極體,能達到提高光能輸出,同時維持元件操作時穩定性的目標。


    目錄 第一章 導論 1 第二章 氮化鎵發光二極體元件結構與製程 4 2.1發光二極體元件結構 4 2.2發光二極體元件製程 5 2.3量測設備介紹 13 2.3.1 二維光強度分佈影像量測系統 13 2.3.2 反射率與穿透率量測系統介紹 13 第三章 大面積發光二極體發光均勻性之研究 15 3.1簡介 15 3.1.1發光二極體電流擁塞現象介紹 15 3.2不同指叉式電極配置對電流擁塞的影響 19 3.3指叉式電極之電阻對電流擁塞的影響 24 3.4本章總結 31 第四章 反射電極之熱穩定性之研究 32 4.1 簡介 32 4.2 Pd/NiO/Al/Ti/Au反射電極的熱穩定性之研究 36 4.2.1 Pd/Ni厚度比例與氧化溫度對歐姆接觸層的影響 36 4.2.2 Pd/NiO/Al/Ti/Au反射電極之熱穩定性 39 4.3 本章總結 49 第五章 大面積覆晶式發光二極體光電特性量測分析 50 第六章 結論 53

    參考文獻
    [1] Pendeoepitaxy of gallium nitride thin films
    Kevin Linthicum,Thomas Gehrke, Darren Thomson, Eric Carlson, Pradeep Rajagopal, Tim Smith, Dale Batchelor, and Robert Davis
    Appl. Phys. Lett. 75, 196 (1999)
    [2] Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
    T. Fujii,Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars,and S. Nakamura
    Appl. Phys. Lett. 84, 855 (2004)
    [3] Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface
    Chul Huh,Kug-Seung Lee, Eun-Jeong Kang, and Seong-Ju Park
    J. Appl. Phys. 93, 9383 (2003)
    [4] http://www.cree.com/ftp/pub/Cpr3bd.pdf
    [5] High-power AlGaInN flip-chip light-emitting diodes
    J. J. Wierer,D. A. Steigerwald, M. R. Krames, J. J. O''Shea, M. J. Ludowise, G. Christenson,Y.-C. Shen, C. Lowery, P. S. Martin, S. Subramanya, W. Götz, N. F. Gardner, R. S. Kern, and S. A. Stockman
    Appl. Phys. Lett. 78, 3379 (2001)
    [6] GaInN/GaN multiple quantum wells green LEDs
    M. Koike, N. Koide, S. Asami, J. Umezaki, S. Nagai, S. Yamasaki,
    N. Shibata, H. Amano, and I. Akasaki, in Proc. SPIE International Society for Optical Engineering,vol. 3002, pp. 36–39, (1997)
    [7] P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
    Hiroshi Amano, Masahiro Kito, Kazumasa Hiramatsu and Isamu Akasaki Jpn. J. Appl. Phys Part 2-Letters 28 , 2112 (1989)
    [8] Hole Compensation Mechanism of P-Type GaN Films
    S. Nakamura, N. Iwasa, M. Senoh, and T. Mukai, Jpn. J. Appl. Phys. 31,1258 (1992)
    [9] Room-temperature photoenhanced wet etching of GaN
    M. S. Minsky, M. White, and E. L. Hu
    Appl. Phys. Lett. 68, 1531 (1996)
    [10] Smooth n-type GaN surfaces by photoenhanced wet etching
    C. Youtsey , I. Adesida , L. T. Romano and G. Bulman
    Appl. Phys. Lett. 72, 560 (1997)
    [11] Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts to n-type GaN
    B. P. Luther, S. E. Mohney, T. N. Jackson, M. Asif Khan, Q. Chen, and J. W. Yang
    Appl. Phys. Lett. 70, 57 (1996)
    [12] Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for n-GaN
    S. Ruvimov, Z. Liliental-Weber, J. Washburn, K. J. Duxstad, E. E. Haller, Z.-F. Fan, S. N. Mohammad, W. Kim, A. E. Botchkarev, and H. Morkoç
    Appl. Phys. Lett. 69, 1556 (1996)
    [13] The effect of thermal annealing on the Ni/Au contact of p-type GaN
    J. K. Sheu , Y. K. Su ,G. C. Chi ,W. C. Chen, C. Y. Chen, C. N. Huang,J. M. Hong,Y. C. Yu, C. W. Wang, and E. K. Lin
    J. Appl. Phys. 83, 3172 (1998)
    [14] Microstructural investigation of oxidized Ni/Au ohmic contact to p-type GaN
    Li-Chien Chen, Fu-Rong Chen, Ji-Jung Kai,Li Chang,Jin-Kuo Ho, Charng-Shyang Jong, Chien C. Chiu, Chao-Nien Huang, Chin-Yuen Chen, and Kwang-Kuo Shih
    J. Appl. Phys. 86, 3826 (1999)
    [15] Low-resistance ohmic contacts to p-type GaN
    Jin-Kuo Ho, Charng-Shyang Jong, Chien C. Chiu, Chao-Nien Huang, Chin-Yuen Chen, and Kwang-Kuo Shih
    Appl. Phys. Lett. 74, 1275 (1999)
    [16] Effects of surface treatments and metal work functions on electrical properties at p-GaN/metal interfaces
    Hidenori Ishikawa, Setsuko Kobayashi, Y. Koide,S. Yamasaki, S. Nagai, J. Umezaki, M. Koike and Masanori Murakami
    J. Appl. Phys. 81, 1315 (1997)
    [17] Handbook of Chemistry and Physics
    David R. Lide editor in chief
    82nd Edition page 12-133
    [18] Low-resistance and thermally stable ohmic contact on p-type GaN using Pd/Ni metallization
    Ho Won Jang, Ki Hong Kim, Jong Kyu Kim, Soon-Won Hwang,Jung Ja Yang,Kang Jae Lee, Sung-Jin Son, and Jong-Lam Lee
    Appl. Phys. Lett. 79, 1822 (2001)
    [19] Modeling of a GaN-based light-emitting diode for uniform current spreading
    Hyunsoo Kim, Ji-Myon Lee, Chul Huh, Sang-Woo Kim, Dong-Joon Kim, Seong-Ju Park,and Hyunsang Hwang
    Appl. Phys. Lett. 77, 1903 (2000)
    [20] Lateral current transport path, a model for GaN-based light-emitting diode: Application to practical device designs
    Hyunsoo Kim, Seong-Ju Park,and Hyunsang Hwang
    Appl. Phys. Lett. 81, 1326 (2002)
    [21] Current crowding in GaN/InGaN light-emitting diodes on insulating substrates
    X. Guo and E. F. Schubert
    J. Appl. Phys. 90, 4191 (2001)
    [22] Development of High Efficiency GaN-Based Multiquantum-Well Light-Emitting Diodes and Their Applications
    Masayoshi Koike, Naoki Shibata, Hisaki Kato, and Yuji Takahashi
    IEEE JOURNAL ON SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 8, NO. 2, MARCH/APRIL 2002
    [23] Low-resistance and highly reflective Zn–Ni solid solution/Ag ohmic contacts for flip-chip light-emitting diodes
    June-O Song, Dong-Seok Leem,J. S. Kwak, O. H. Nam, Y. Park and Tae-Yeon Seong
    Appl. Phys. Lett. 83, 4990 (2003)
    [24] Highly Reflective and Low-Resistant Ni/Au/ITO/Ag Ohmic Contact on p-Type GaN
    Soo Young Kim and Jong-Lam Lee
    Electrochemical and Solid State Letters, 7(5) G102-104 (2004)
    [25] Ⅲ-Nitride Light-Emitting Device with Increased Light Generating Capability
    Krames et al.
    United States Patent US 6521914 B2 (2003)
    [26] Low resistance high reflectance contacts to p-GaN using oxidized Ni/Au and Al or Ag
    D. L. Hibbard, S. P. Jung, C. Wang, D. Ullery, Y. S. Zhao, H. P. Lee,W. So and H. Liu
    Appl. Phys. Lett. 83, 311 (2003)
    [27] 高反射p型氮化鎵歐姆接觸之研究
    方啟鑫
    國立中央大學電機所碩士論文

    QR CODE
    :::