| 研究生: |
許傑閔 Chieh-Ming Hsu |
|---|---|
| 論文名稱: |
砷化銦鎵量子點在砷化鎵多面體結構之光學性質研究 Optical properties of InGaAs quantum dots on a GaAs multi-facet structure |
| 指導教授: |
徐子民
Tzu-Min Hsu |
| 口試委員: | |
| 學位類別: |
碩士 Master |
| 系所名稱: |
理學院 - 物理學系 Department of Physics |
| 畢業學年度: | 95 |
| 語文別: | 中文 |
| 論文頁數: | 49 |
| 中文關鍵詞: | 砷化銦鎵 、量子點 、多面體微結構 、光激發螢光光譜 |
| 外文關鍵詞: | quantum dot, InGaAs, PL, PLE, multifacets structure |
| 相關次數: | 點閱:10 下載:0 |
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本論文是利用顯微光激發螢光光譜及顯微光激螢光激發光譜來分析砷化銦鎵量子點在砷化鎵多面體結構上的光學性質。
我們從掃瞄式電子顯微鏡知道量子點在砷化鎵多面體結構上的位置分布與砷化鎵基板上平台大小的長寬比有關,而我們利用顯微光激發螢光光譜及顯微光激螢光激發光譜來討論砷化鎵多面體結構與砷化銦鎵量子點的發光位置,另外從空間的光譜解析影像(spatial - mapping)可以發現砷化鎵多面體上不同平面的相對位置。
We present the results of PL spectra and PLE spectra to analyze the optical properties of InGaAs QDs and multi-facets structure.
The number and position of QDs were determined using a scanning electron microscope and the position of QDs can be controlled by the size of the mesa on a GaAs substrate. We present the emission peak of QDs and multi-facets structure by using PL spectra and PLE spectra. From the two dimensional spatial mapping, we were determined the position of the different plane on the multi-facets structure.
1. Y. Arakawa and H. Sakaki, Appl. Phys. Lett. 40, 939 (1982).
2. P. Gangier and I. Abram, Phys. World 16, 31 (2003).
3. Cheol-Koo Hahn, Junichi Motohisa, Takashi Fukui, Appl. Phys. Lett. 76, 3947 (1998).
4. Tetsuo Umeda, Kazuhide Kumakura, Junichi Motohisa, Takashi- Fukui, Physica E. 2, 714 (1998).
5. Haiyan An, Junichi Motohisa, Appl. Phys. Lett. 77, 385 (2000).
6. M. H. Baier, E. Pelucchi, and E. Kapon, Appl. Phys. Lett. 84, 648 (1982).
7. M. Walther, E. Kapon, J. Christen, D. M. Hwang, R. Bhat, Appl. Phys. Lett. 60, 521 (1992).
8. W.-H. Chang, H.-S. Chang, W.-Y. Chen, T. M. Hsu, T.-P. Hsieh, J.-I. Chyi, and N.-T. Yeh, Phys. Rev. B 84, 233302 (2005).
9. Tung-Po Hsieh, Pei-Chin Chiu, Yu-Chuan Liu, Nien-Tze Yeh, Wen-Jeng Ho, and Jen-Inn Chyi, J. Vac. Sci. Technol. B 23, 262 (2005).
10. Tung-Po Hsieh, Jen-Inn Chyi, Hsiang-Szu Chang, Wen-Yen Chen, Tzu Min Hsu, Wen-Hao Chang. Appl. Phys. Lett. 90, 073105 (2007).
11. E. S. Moskalenko, K. F. Karlsson, P. O. Holtz, B. Monemar, W. V. Schoenfeld, J. M. Garcia, and P. M. Petroff, Phys. Rev. B 66, 195332 (2002).
12. P. Finnie, M. Buchanan, C. Lacelle, A.P. Roth, J. Cry. Growth 160, 220 (1996).
13. J. Lefebvre, P. J. Poole, J. Fraser, G. C. Aers, D. Chithrani, and R. L. Williams, J. Vac. Sci. Technol. B 20, 2173 (2002).
14. J. J. Finley, A. D. Ashmore, A. Lemaitre, D. J. Mowbray, M. S. Skolnick, I. E. Itskevich, P. A. Maksym, M. Hopkinson, and T. F. Krauss, Phys. Rev. B 63, 073307 (2001).
15. T. I. Kamins and R. S. Williams, Appl. Phys. Lett. 71, 1201, 1997.
16. T.-P. Hsieh, H.-S. Chang, W.-Y. Chen, W.-H. Chang, T. M. Hsu, N.-T. Yeh, W.-J. Ho, P.-C. Chiu, and J.-I. Chyi, Nanotechnology 17, 512, 2006.
17. M. López, T. Ishikawa, and Y. Nomura, Jpn. J. Appl. Phys. 32, 1051 (1993).
18. A. Konkar, A. Madhukar, and P. Chen, Appl. Phys. Lett. 72, 220, (1998).
19. A. Konkar, R. Heitz, T. R. Ramachandran, P. Chen, and A. Madhukar, J. Vac. Sci. Technol. B 16, 1334, (1998).
20. R. Zhang, R. Tsui, K. Shiralagi, and H. Goronkin, Jpn. J. Appl. Phys. Part 1, 38, 455, (1999).
21. T. Fukui, S. Ando, Y. Tokura and T. Toriyama, Appl. Phys. Lett. 58, 2018, (1991).
22. K. Kumakura, K. Nakakoshi, J. Motohisa, T. Fukui and H. Hasegawa, Jpn. J. Appl. Phys. 34, 4387, (1995).
23. K. H. Schmidt, G. Medeiros-Ribeiro, M. Oestreich, P. M. Petroff,
and G. H. Dohler, Phys. Rev. B 54, 11346, 1996.
24. E. S. Moskalenko, K. F. Karlsson, P. O. Holtz, B. Monemar, W. V.
Schoenfeld, J. M. Garsia, and P. M. Petroff, Phys. Rev. B 64, 085302, (2001).
25. K. Leifer, A. Hartmann, Y. Ducommun, and E. Kapon, Appl. Phys. Lett. 77, 3923, (2000).
26. A. Hartmann, L. Loubies, F. Reinhardt, and E. Kapon, Appl. Phys. Lett. 71, 1314, (1997).
27. G. Biasiol, E. Martinet, R. Reinhardt, A. Gustafsson, and E. Kapon, J. Cryst. Growth 170, 600, (1997).
28. H. Weman, E. Martinet, A. Rudra, and E. Kapon, Appl. Phys. Lett. 73, 2959, (1999).
29. D. Chithrani, R. L. Williams, J. Lefebvre, P. J. Poole, and G. C. Aers, Appl. Phys. Lett. 84, 978, (2004).
30. R. L. Williams, G. C. Aers, P. J. Poole, J. Lefebvre, D. Chithrani, and B. Lamontagne, J. Cryst. Growth 223, 321, (2001).
31. J. Lefebvre, P. J. Poole, G. C. Aers, D. Chithrani, and R. L. Williams, J. Vac. Sci. Technol. B 20, 2173, (2002).
32. P. Michler, A. Kiraz, C. Becher, W. V. Schoenfeld, P. M. Petroff, L. Zhang, E. Hu, and A. Imamoglu, Science 290, 2282, (2000).
33. Arno Hartmann, Yann Ducommun, Laurent Loubies, Klaus Leifer, and Eli Kapon, Appl. Phys. Lett. 73, 2322, (1998).
34. A. Hartmann, L. Loubies, F. Reinhardt, A. Gustafsson, A. Sadeghi, and E. Kapon, Appl. Surf. Sci. , 4793, (1997).
35. F. Vouilloz, D. Y. Oberli, S. Wiesendanger, B. Dwir, F. Reinhardt, and E. Kapon, Phys. Status Solidi A 164, 259, (1997).
36. Clint B. Geller, Walter Wolf, Silvia Picozzi, Alessandra Continenza, Ryoji Asahi, Wolfgang Mannstadt, Arthur J. Freeman, Erich Wimmer, Appl. Phys. Lett. 79, 368, (2001).