單片非週期性晶疇極化反轉鈮酸鋰同時作為Nd:YVO4雷射Q-調制和腔內光參量產生之研究

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研究生：	王俊霖 Chun-lin Wang
論文名稱：	單片非週期性晶疇極化反轉鈮酸鋰同時作為Nd:YVO4雷射Q-調制和腔內光參量產生之研究 Single aperiodically poled lithium niobate for simultaneous laser Q-switching and optical parametric generation in a Nd:YVO4 laser
指導教授：	陳彥宏 Y. H. Chen
口試委員:
學位類別：	碩士 Master
系所名稱：	理學院 - 光電科學與工程學系 Department of Optics and Photonics
畢業學年度：	98
語文別：	中文
論文頁數：	77
中文關鍵詞：	鈮酸鋰、光參量產生、Q-調制、非週期
外文關鍵詞：	aperiodically, Q-switching, ptical parametric generation, lithium niobate
相關次數：	點閱：12 下載：0
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光參量振盪器(optical parametric oscillators; OPOs)是最常用來得到可調式雷射的技術之一，在遙測、光譜學、非線性光學、測距儀、光通訊、生醫等，都有很廣泛的應用。
利用聲光、電光元件來作 Q 調制脈衝雷射搭配非線性晶體，達成高效率的非線性波長轉換，此等元件亦不少。但積體多樣元件於單塊晶體的多功能元件並不多見。
本篇論文致力於把兩種功能的元件整合在單塊非週期性鈮酸鋰晶體上。此兩種元件分別為一電光Q-調制及一光參量產生器。我們
利用一非週期性晶格極化反轉鈮酸鋰晶體來同時滿足驅動此二元
件所需之相位匹配，並將它放置在一 Nd:YVO 4 雷射共振腔內同時作為雷射 Q 調制器及腔內光參量放大器。
實際量測APLN，在外加重覆率為1kHz的電場360V/mm，所得1550nm最窄脈寬約為5.1857ns，尖峰功率為一千零二十九瓦特；而串級式EO OPG PPLN的外加電場為360V/mm，所得1550nm最窄脈寬約為4.2879ns，尖峰功率為四百六十九瓦特。兩者結果相比，半波電場部分相距不大，幾乎平手；而尖峰功率部分，APLN和串級式EO OPG PPLN的比值為2.2；OPO轉換效率的比值為1.67。

Optical parametric oscillators (OPOs) can produce wavelength tunable coherent light sources and have been widely used in various applications including the remote sensing, spectroscopy, nonlinear optics, range finder, optical communications, and bio-medicine.
Several high-efficiency intracavity wavelength converters have been developed via the use of a nonlinear crystal in an acousto-optic or electro-optic (EO) Q-switched solid-state laser. However, a more compact integrated system performing the same device functions is still rare.
In this thesis, we have devoted to integrate two device functions in a monolithic LiNbO3 crystal. These two devices are an EO Q-switching and an optical parametric generator (OPG). An aperiodically poled lithium niobate (APLN) crystal has been designed and fabricated in this work to simultaneously satisfy the phase-matching conditions required for functioning the two devices. We further inserted this APLN crystal in a Nd:YVO4 laser system to simultaneously function as a laser Q switch and an intracavity optical parametric amplifier.
We have successfully demonstrated an efficient EO Q-switched IOPO in a compact diode-pumped 1064-nm Nd:YVO4 laser achieved using a single intracavity APLN.The APLN device was designed using the SA optimization method. It can simultaneously function as an EO Q-switch and an OPG.The OPO efficiency achieved with the system using the APLN device has been ~1.67 times higher than that with a system using a cascade PPLN device of the same device length and under the same system operating conditions. When the intracavity APLN was driven with a ~ 360-V pulse train at 1 kHz, we observed ~ 33 % energy depletion in fundamental laser pulses, yielding ~ 5-ns, ~ 1029W peak-power 1550-nm OPO laser pulses from this compact laser system pumped at 8.4-W diode power.

目錄
第一章	緒論………………………………………………………………1
1-1 簡介……………………………………………………………1
1-2 研究動機………………………………………………………5
1-3 內容概要………………………………………………………6
第二章	理論………………………………………………………………7
2-1 準相位匹配原理………………………………………………7
2-2索爾克濾波器(Šolc type filters)……………………………12
2-3 利用鈮酸鋰晶體製作索爾克濾波器(Šolc type filters)(EO
PPLN)………………………………………………………14
2-4 光參量產生器………………………………………………23
2-5 非週期性反轉之鈮酸鋰晶體………………………………26
第三章	元件設計及製程………………………………………………29
3-1 元件設計-模擬退火法………………………………………29
3-2 元件製程……………………………………………………32
第四章	實驗量測及模擬結果分析……………………………………37
4-1 實驗架構……………………………………………………37
4-2 模擬結果……………………………………………………40
4-3 量測結果……………………………………………………44
4-4 結果分析……………………………………………………55
第五章	結論與未來展望………………………………………………56
5-1 結論…………………………………………………………56
5-2 未來展望……………………………………………………56
第六章 參考文獻………………………………………………………61
圖目錄
圖1-1-1 轉換效率圖……………………………………………………3
圖1-1-2 EO PPLN半波電場和脈寬圖…………………………………3
圖1-1-3 利用單片非週期性晶疇極化反轉鈮酸鋰晶體作為Nd:YVO4
雷射Q-調制和腔內二倍頻轉換架構示意圖…………………4
圖1-1-4 671nm紅光脈寬和尖峰功率圖………………………………4
圖1-2-1 串級式週期性和非週期性晶疇極化反轉鈮酸鋰晶體示意
????????????????圖………………………………………………………………5
圖2-1-1 能量和動量守恆示意圖………………………………………7
圖2-1-2 準相位匹配動量守恆示意圖…………………………………8
圖2-1-3 準相位匹配晶體構造示意圖…………………………………9
圖2-2-1 半波板示意圖………………………………………………12
圖2-2-2 Šolc Type Filter架構示意圖…………………………………13
圖2-3-1 鈮酸鋰晶體在外加電場後光軸的轉動示意圖……………18
圖2-3-2 鈮酸鋰晶體電光係數與座標軸關係示意圖………………19
圖2-3-3 鈮酸鋰晶體作為索爾克濾波器示意圖……………………20
圖2-3-4 對波長1064nm之不同長度PPLN濾波器頻譜分佈圖……22
圖3-1-1 模擬退火法之流程圖………………………………………30
圖3-2-1 黃光微影流程圖……………………………………………33
圖3-2-2 極化反轉製程流程示意圖…………………………………33
圖3-2-3 鈮酸鋰極化反轉過程示意圖………………………………34
圖3-2-4 晶體+Z面Etching過後之圖形………………………………35
圖4-1-1 APLN、晶片載具與電極配置圖……………………………37
圖4-1-2 實驗架構圖…………………………………………………38
圖4-1-3 實驗架構實際圖……………………………………………38
圖4-2-1 APLN(domain=7.1um)與相對OPG-PPLN增益比較圖……40
圖4-2-2 APLN(domain=7.1um)所需半波電場圖……………………41
圖4-2-3 APLN(domain=5um)與相對OPG-PPLN增益比較圖………41
圖4-2-4 APLN(domain=5um)所需半波電場圖……………………42
圖4-2-5 APLN(domain=4um)與相對OPG-PPLN增益比較圖………42
圖4-2-6 APLN(domain=4um)所需半波電場圖……………………43
圖4-3-1 測量APLN轉偏振角度對於電壓的影響架構圖……………44
圖4-3-2 1064 nm 穿透率對電場施加作圖(APLN) …………………45
圖4-3-3 1064 nm 穿透率對電場施加作圖(Caseacade PPLN) ……45
圖4-3-4  光參量產生器和光參量振盪器之頻譜分析比較圖………48
圖4-3-5  光參量產生器和光參量振盪器之頻譜分析比較圖………49
圖4-3-6 1064nm和1550nm非相位匹配和頻轉換630nm紅光圖……50
圖4-3-7 1550nm尖峰功率和脈寬對泵浦強度作圖………………51
圖4-3-8 1550nm最窄脈寬和1064nm雷射脈衝損耗圖……………52
圖4-3-9 1550nm尖峰功率和脈寬對泵浦強度作圖…………………52
圖4-3-10 1550nm最窄脈寬和1064nm雷射脈衝損耗圖………………53
圖4-3-11 1550nm雷射脈衝連續圖……………………………………54
圖5-2-1 APLN與相對OPG-PPLN增益比較圖……………………55
圖5-2-2 APLN所需半波電場圖……………………………………56
圖5-2-3 實驗架構：利用Nd:MgO:APLN作為同時供應增益、調制
和光參量產生器的機制……………………………………57
圖5-2-4 Nd:MgO:APLN與相對OPG-PPLN增益比較圖…………58
圖5-2-5 Nd:MgO:APLN所需半波電場圖……………………………58
表目錄
表2-2-1 鈮酸鋰晶體的Sellmeier equation 參數……………………15
表2-2-2 鈮酸鋰晶體在波長0.6328μm下各項電光係數…………16

                                

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