本論文以製作微米尺寸垂直式有機發光電晶體(Vertical organic light-emitting transistors, VOLETs)陣列為主，除了詳細說明8×8點矩陣式面板的設計與製作流程之外，還清楚解釋其背後原因。
透過原子層沉積(ALD)及曝光顯影等技術，製作出垂直式有機發光電晶體面板。使用ALD沉積高介電係數的三氧化二鋁與氧化鉿作為雙層介電層，並以ALD沉積N-type半導體材料氧化鋅，同時搭配綠光有機材料PFO:F8BT作為發光層。藉由顯影蝕刻方式將氧化鋅做微小圖案化，以達到單一像素尺寸最小可達到10μm×15μm的發光面積。透過光學微影技術，將每一道光罩圖案精準製作在元件上，使微小面積下有64個單一垂直式有機發光電晶體。同時發現電荷下注入式的垂直有機發光電晶體結構中，裸露出的氧化鋅面積與發光面積是一致的，利用此現象來定義發光面積。最後利用Arduino微控制器對面板進行驅動並成功發出10μm×15μm面積的綠光。

In this thesis, micro-sized Vertical organic light-emitting transistors (VOLETs) arrays, in addition to explaining the design and manufacturing process of 8 × 8 dot matrix panel in detail, the reasons behind it are also explained clearly.
Through the technologies of atomic layer deposition (ALD) and exposure development, a vertical organic light-emitting transistor panel is fabricated. ALD was used to deposit aluminum oxide and hafnium oxide with a high dielectric constant as a double-layer dielectric layer, and ALD was used to deposit an N-type semiconductor material, zinc oxide, and a green organic material, PFO: F8BT, was used as a light-emitting layer. The zinc oxide is micro-patterned by a development etching method, so as to achieve a minimum light emitting area of a single pixel size of 10 μm × 15 μm. Through optical lithography technology, each photomask pattern is accurately fabricated on the substrate
, so that there are 64 cell of the vertical organic light-emitting transistors under the micro size area. At the same time, it was found that in the vertical organic light-emitting transistor structure of the downward injection type of charge, the area of the exposed zinc oxide and the light-emitting area are consistent, and this phenomenon is used to define the light-emitting area. Finally, the panel is driven by an Arduino microcontroller and a 10μm × 15μm area is successfully radiant green light.

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