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研究生： 劉哲銘
C-M Liu
論文名稱： 以熱交換器法生長氧化鋁單晶與晶體檢測
指導教授： 陳志臣
Jyh-Chen Chen
口試委員:
學位類別： 碩士
Master
系所名稱： 工學院 - 機械工程學系
Department of Mechanical Engineering
畢業學年度： 88
語文別： 中文
論文頁數： 62
中文關鍵詞： 熱交換器法 、氧化鋁 、晶體
外文關鍵詞： HEM, Sapphire, Crystal
相關次數： 點閱：13  下載：0 
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    • 本研究也針對利用熱交換器法所生長出之Sapphire晶體作一系列的檢測，例如利用穿透式及反射式光學顯微鏡（Optical-Microscope）及掃描式電子顯微鏡（Scanning-Electron-Microscope）觀察晶體之微觀組織，比較在不同的生長條件下其結構組織之不同，並與品質良好之氧化鋁單晶做比較，同時探討晶體中缺陷產生之原因，另外還利用能譜儀（Energy-Dispersive-Spectrometer）來對晶體之成分做分析，以確定污染物之種類及分佈狀況，且為了要了解晶體缺陷對晶體硬度之影響，還利用微硬度測試儀來測試所生長出之晶體硬度，比較與單晶的差異，希望能藉這些檢測來作為改善晶體品質之依據，以期能生長出高品質、高純度之晶體。

    摘要..................................................I 致謝..................................................II 目錄..................................................III 圖表目錄..............................................V 第一章 序論...........................................1 1.1熱交換器法之簡介.................................1 1.2氧化鋁晶體性質與應用..........................2 1.3 文獻回顧..........................................3 1.4 研究動機..........................................5 第二章晶體生長........................................6 2.1實驗設備...........................................6 2.2實驗...............................................8 2.2.1實驗前之準備工作...............................8 2.2.2實驗步驟.........................................9 2.2.3長晶過程及現象之探討.......................10 2.3 長晶結果..........................................12 2.3.1 利用降溫來生長晶體..........................13 2.3.2 利用增加氦氣流量生長晶體.............15 2.4 結論............................................................16 第三章 晶體之檢測及缺陷之研究............17 3.1 缺陷之種類........................................17 3.2檢測之方法.........................................17 3.3缺陷分析...........................................18 3.3.1氣孔分析.........................................18 3.3.2 樹枝狀結構分析..................................19 3.3.3 差排分析........................................20 3.4晶種之檢測.........................................20 3.5晶體之檢測.........................................21 3.6結論...............................................23 第四章 總結論.........................................24 4.1 結論..............................................24 4.2 未來方向..........................................24 參考文獻..............................................58

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