本論文報告利用矽當作成長氮化鎵材料的基板，成功將量子井結構成
長於傾斜7°(001)Si 圖形化基板上，並分析其結構與光學特性。
由於氮化鎵材料與矽基板的晶格常數與熱膨脹係數差異甚大，為了避
免氮化鎵材料產生裂縫，本研究藉由低溫氮化鋁緩衝層及多孔氮化矽以釋
放應力和減少缺陷密度。
為了使氮化鎵的發光效率提高，本研究於傾斜7°(001)Si 圖形化基板上
成長半極化(1-101)氮化鎵材料，並發現所產生的缺陷位置都在相鄰的氮化
鎵區塊接合處，而在接合處以外的地方則幾乎無缺陷存在。X-ray 繞射實驗
也顯示在(1-101)氮化鎵上成長氮化銦鎵時，銦的含量會較在(0001)面少，且
成長速率較慢。很可能是因為銦含量低的關係，其表面並無V 形缺陷。另
經變溫光激螢光量測得知在(1-101)面上的氮化銦鎵量子井具較高活化能，
可能是因為載子所需跨越位障比(0001)面較高。

The main challenge for growing GaN on Si is overcome the cracking issue caused by the large mismatch in lattice constants and thermal expansion coefficients between GaN and Si. Various growth methods, such as LT-AlN interlayer, AlGaN graded layer, and in situ SiN layer, have been proposed to cope with this issue. These interlayers are usually effective in both strain reduction and dislocation blocking. Using these techniques, we are able to produce blue light-emitting diodes with a maximum output power of 1.2 mW at 80 mA. In order to improve the luminescence efficiency, growth of semi-polar (1-101) GaN on patterned 7-degree off (001) Si substrate is investigated. It is found that high quality GaN can be obtained by this method and defects are localized in the area, at which the coalescence of GaN crystal occurs. InGaN quantum wells grown on the template exhibit no V-defect. Their photoluminescence intensity is not sensitive to In content for the In content studied. They also have higher activation energy and show less localization effect.

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