由於高效率III-V族太陽能電池的性能優越，近來受到廣泛注意。而晶格匹配的基板在太陽能電池製造中被認為是非常重要的。本研究在Si基板上成長Ge磊晶薄膜，作為製造高效率III-V族太陽能電池的虛擬鍺基板。我們使用的兩種主要方法是射頻磁控濺射和迴圈熱退火。在Si基板上利用射頻磁控濺射沉積鍺磊晶薄膜與其它技術相比具有成本低的優點，也是一種安全的製造方法。為了降低螺紋狀差排密度（TDD）和減少缺陷，在Si表面沉積Ge磊晶薄膜後進行迴圈熱退火。由於Si和Ge在熱膨脹係數上的不匹配，退火後Ge薄膜的平面應力由壓縮變為拉伸。然後，我們將利用X光繞射（XRD）、拉曼光譜、原子力顯微鏡（AFM）和掃描電子顯微鏡（SEM）分析迴圈退火的影響以及TDD的還原機制。

III-V solar cells are becoming more widely known for their high efficiency and performance. Hence, a lattice - matched substrate is considered very important in their manufacturing. In this thesis, Ge epitaxial films on Si substrates are used as a virtual Ge substrate to manufacture highly efficient III-V solar cells. The two main methods employed are RF magnetron sputtering and cyclic thermal annealing. Ge epitaxial film will be deposited on the Si substrate via the RF magnetron sputtering method due to its lower cost and safety. Cycle thermal annealing is carried out after the deposition of Ge film on Si with the aim of reducing the threading dislocation density (TDD) and defects. Due to the mismatch between Si and Ge in terms of the thermal expansion coefficient, after the annealing process, the plane strain of the Ge film will be changed from compression to tension. We analyzed the effects of the cycle annealing as well as the TDD reduction mechanism via X-ray diffraction (XRD), Raman spectroscopy, atomic force microscopy (AFM), and scanning electron microscopy (SEM).

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