本文利用乾蝕刻或溼蝕刻等半導體製程方式，在不同材料上製作出不同角度的閃耀式光柵，本篇中將介紹四種，一、氮化矽(SiNx)薄膜穿透式閃耀光柵，二、方解石反射式閃耀光柵，三、矽(100)傾斜10o反射式閃耀光柵，四、矽45o反射式光柵，上述的四種方式可藉由調製蝕刻速率，或是改變切割晶體的角度，利用材料和溼蝕刻溶液反應的特性，製作出各種角度的光柵；另外使用半導體製程方式將更易於大量的穩定製造。
此外，也將上述的矽45o 光柵，配合稜鏡作封裝，實際的應用至所設計的200GHz 4 channel Grismlens(稜鏡式透鏡光柵)複合式分波多工器系統中，以波長為1540～1570nm的測試光源，配合矽分光鏡進行整體系統的光學特性量測，量測系統的插入損失為-24.25dB，在1dB單一通道帶寬達0.14nm，其中矽分光鏡的損耗-7.29dB，非球面鏡耦合至輸出光纖的效率為-2.3dB；將檢討問題所在，確定未來發展方向。

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