以矽鍺為材料，用於850nm短距光纖通訊超高增益頻寬積(428GHz)的累增崩潰光二極體

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研究生：	李宗儒 Zong-ru Li
論文名稱：	以矽鍺為材料，用於850nm短距光纖通訊超高增益頻寬積(428GHz)的累增崩潰光二極體 Using SiGe based avalanche photodiode operating at a wavelength of 850 nm with a gain-bandwidth product of 428 GHz
指導教授：	許晉瑋 JIN-WEI SHI
口試委員:
學位類別：	碩士 Master
系所名稱：	資訊電機學院 - 電機工程學系 Department of Electrical Engineering
畢業學年度：	96
語文別：	中文
論文頁數：	52
中文關鍵詞：	累增光二極體、矽鍺
外文關鍵詞：	photodiode, SiGe.avalanche
相關次數：	點閱：11 下載：0
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在本論文研究中，我們提出了一個可操作在830nm波段的矽-矽鍺垂直入射的雪崩光二極體。我們的元件可以藉由操作在崩潰區而最小化因N型基板所產生的擴散電流而造成的低頻roll-off的問題，同時也可以藉由衝擊離子的效應而產生高輸出頻寬。所以我們的元件可以在不使用複雜的SOI技術之下，而達到高輸出頻寬(15.3GHz)以及極高的增益頻寬積(428GHz)。

In this thesis, we demonstrate a high-performance Si–SiGe-based vertical-illuminated avalanche photodiode (APD) operating in the 830-nm wavelength regime. Under avalanche operation, the low-frequency roll-off caused by the slow diffusion current from the n+ silicon substrate can also be minimized. Also, our device can achieved high bandwidth due to impact-ionization-induced resonant effect. So, a wide bandwidth (15.3 GHz) and an extremely high gain-bandwidth (428 GHz) can be achieved simultaneously in our device without using complex silicon-on-insulator or germanium-on-insulator substrates.

中文摘要．．．．．．．．．．．．．．．．．．．．．．．． Ⅰ
英文摘要．．．．．．．．．．．．．．．．．．．．．．．． Ⅱ
目錄．．．．．．．．．．．．．．．．．．．．．．．．．． Ⅲ
圖目錄．．．．．．．．．．．．．．．．．．．．．．．．． Ⅴ
表目錄．．．．．．．．．．．．．．．．．．．．．．．．． Ⅷ
一、     導論．．．．．．．．．．．．．．．．．．．． 1
1-1   光纖通訊的歷史．．．．．．．．．．．．．．． 1
1-2   光纖通訊的應用．．．．．．．．．．．．．．． 4
1-3   論文架構．．．．．．．．．．．．．．．．．． 6
二、     分離式吸收、傳輸、電荷、累增之矽鍺雪崩光二極體的設計．． 7
2-1   研究背景．．．．．．．．．．．．．．．．．． 7
2-2   元件應用．．．．．．．．．．．．．．．．．． 9
2-3   光二極體基本原理．．．．．．．．．．．．．． 10
2-4   光二極體的結構分類．．．．．．．．．．．．． 12
2-4-1  磊晶結構．．．．．．．．．．．．．．．．．． 12
2-4-2  幾何結構．．．．．．．．．．．．．．．．．． 12
2-5   傳統的PIN光二極體．．．．．．．．．．．．． 15
2-6   傳統的矽基底雪崩光二極體．．．．．．．．．． 18
2-7   分離式吸收、傳輸、電荷、增益之矽鍺雪崩光二極體 ．．．．． 21
2-7-1  磊晶介紹．．．．．．．．．．．．．．．．．． 21
2-7-2  如何消除低頻3dB頻寬衰減而不使用SOI技術．．  24
2-7-3  降低因元件操作在崩潰區所產生的3dB頻寬衰減． 25
三、     分離式吸收、電荷、傳輸、增益之矽鍺雪崩光二極體的製程步驟．．．．．．． 28
四、     量測結果與討論．．．．．．．．．．．．．．． 37
4-1   光波網路分析儀(光網儀)量測系統．．．．．．． 37
4-2   光電流與光響應度量測結果．．．．．．．．．． 38
4-3   頻寬量測結果．．．．．．．．．．．．．．．． 40
五、     結論．．．．．．．．．．．．．．．．．．．． 50
參考文獻．．．．．．．．．．．．．．．．．．．．．．．  51

                                

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