跳到主要內容

簡易檢索 / 詳目顯示

研究生: 丁怡真
Yi-Chen Ding
論文名稱: 以表面處理及塗佈奈米粒子抑制錫晶鬚生長
The Suppression of Tin Whisker Growth by Surface Coating of Nano Particles and Surface Treatments
指導教授: 吳子嘉
Albert T. Wu
口試委員:
學位類別: 碩士
Master
系所名稱: 工學院 - 化學工程與材料工程學系
Department of Chemical & Materials Engineering
畢業學年度: 97
語文別: 中文
論文頁數: 67
中文關鍵詞: 錫晶鬚
外文關鍵詞: whisker
相關次數: 點閱:9下載:0
分享至:
查詢本校圖書館目錄 查詢臺灣博碩士論文知識加值系統 勘誤回報
  • 將奈米氧化錫顆粒分散懸浮於去離子水中,並利用噴嘴以噴淋的方式噴淋於以銅為基板的錫膜表面。噴淋的奈米氧化錫層被包含於再生氧化層中,用來抑制錫晶鬚的生長。結果顯示奈米氧化錫顆粒對於錫晶鬚的生長有確實的抑制作用。將表面經過預處理的試片,置於25oC、40oC和60oC下43週,有很多突起物生長於試片表面,但比表面未經預處理的試片突起物數量少很多。其XPS結果顯示,拋光及酸蝕等預處理有將表面氧化層去除。最後噴淋奈米氧化錫顆粒,經過退火處理後,而生成的再生氧化層,提供許多弱點讓錫晶鬚和突起物生長。此結果成功的增加許多洩壓點讓突起物生長,而抑制較長的錫晶鬚生長。


    Tin oxide nano particles dispersed in water solution were sprayed on the tin-plated copper surface and served as coating layer in order to study its effect on the prevention of tin whisker formation. The results indicated that tin oxide nano particles could inhibit the growth of tin whiskers to certain extent. Many hillocks instead of long whiskers grew on the surfaces of samples that underwent 25oC, 40oC and 60oC annealing for 43 weeks. Furthermore, a strong etchant and polishing were applied to the tin-plated samples. XPS results showed that the surface oxide was removed by surface treatments; the surfaces were then coated by spraying nano particles. It is found that the coherency of the re-grown oxide during annealing was reduced, leading to the growth of hillocks instead of long whiskers. This approach seems to successfully enhance the relaxation of stress to prevent the growth of long whiskers.

    第一章 序論 1 1.1 背景 1 1.2 研究動機 4 1.3 材料性質 5 1.3.1 錫 5 1.3.2 氧化錫 5 1.3.3 銅 6 1.4 克肯達效應(Kirkendall Effect) 6 第二章 文獻回顧 7 2.1 生長機制 7 2.2 生長條件 8 2.2.1 介金屬化合物導致錫晶鬚的成長 8 2.2.2 表面氧化錫層導致錫晶鬚的成長 11 2.3 緩和錫晶鬚成長方法 12 2.4 其它造成錫晶鬚生長的因素 16 第三章 實驗方法 20 3.1 試片製作 20 3.1.1 奈米氧化錫的分散 20 3.1.2 錫銅試片的製作 20 3.1.3 試片表面處理 21 3.1.4 實驗流程圖 22 3.2 藥品 24 3.3 儀器原理 25 3.3.1 掃描式電子顯微鏡(SEM) 25 3.3.2 X射線光電子能譜儀( XPS ) 25 3.3.3 聚焦離子束顯微鏡(FIB) 26 3.3.4 原子力顯微鏡(AFM) 26 第四章 結果與討論 27 4.1 奈米氧化錫溶液的分散度 27 4.2 電鍍錫 29 4.3 表面處理 31 4.4 FIB結果 46 4.5 示意圖 48 4.6 XPS結果 50 4.7 AFM結果 52 第五章 結論 54 參考資料 56

    H. Y. Hunsicker, L. W. Kempf, Quart. Trans., 1, 6 (1947)
    B. Jiang, A. P. Xian, J. Mater. Sci. - Mater. Electron., 18, 513 (2007)
    K. Suganuma, “Lead-Free Soldering in Electronics”, 2004,
    p.132,139,140,150,156
    S. M. Arnold, Proc. IEEE Electronic components technology conf. 75 (1959)
    S. Mathew, M. Osterman, T. Shibutani, Q. Yu, M. Pecht, IEEE Proc. HDP’07, 1, (2007)
    K. N. Tu, C. Chen, A. T. Wu, J. Mater. Sci. - Mater. Electron., 18, 269 (2007)
    S. C. Britton, Trans. Inst. Met. Finish., 52, 95 (1974)
    K. N. Tu, Phys. Rev. B, 49, 2030 (1994)
    K. N. Tu, Mater. Chem. Phys., 46, 217 (1996)
    K. N. Tu, J. C. M. Li, Mater. Sci. Eng., A, 409, 131 (2005)
    M. W. Barsoum, E. N. Hoffman, R. D. Doherty, S. Gupta, A. Zavaliangos, Appl. Phys. Lett., 93, 206104 (2004)
    M. Sobiench, U. Welzel, E. J. Mittemeijer, W. Hugel, A. Seekamp, Appl. Phys. Lett., 93, 011906 (2008)
    M. H. Lu, K. C. Hsieh, J. Electron. Mater.,36,1448 (2007)
    M. W. Barsoum, E. N. Hoffman, R. D. Doherty, S. Gupta, A. Zavaliangos, Appl. Phys. Lett., 93, 206104 (2004)
    P. Oberndorff, M. Dittes, P. Crema, P. Su, E. Yu, IEEE Trans. Electron. Packag. Manuf., 29, 239 (2006)
    J. W. Osenbach, J. M. DeLucca, B. D. Potteiger, A. Amin, R. L. Shook, F. A. Baiocchi, IEEE Trans. Electron. Packag. Manuf., 30, 23 (2007)
    C. C. Wei, P. C. Liu, C. Chen, J. Appl. Phys., 102, 043521 (2007)
    Y. Nakadaira, S. Jeong, J. Shim, J. Seo, S. Min, T. Cho, S. Kang, S. Oh, Microelectron. Reliab., 48, 83 (2008)
    K. W. Moon, C. E. Johnson, M. E. Williams, O. Kongstein, G. R. Stafford, C. A. Handwerker, W. J. Boettinger, J. Electron. Mater., 34, L31 (2005)
    E. Chason, N. Jadhav, W. L. Chan, L. Reinbold, K. S. Kumar, Appl. Phys. Lett., 92, 171901 (2008)
    K. S. Kim, J. H. Kim, S. W. Han, Mater. Lett., 62, 1867 (2008)
    M. Dittes, P. Oberndorff, L. Petit, Infineon Technologies
    M. Takeuchi, K. Kamiyama, K. Suganuma, J. Electron. Mater., 35, 1918 (2006)
    G. T. Galyon, R. Gedney, http://www.circuitsassembly.com
    X. Chen , F, Chonglun ,Z. Yun , Joseph A., http://www.0nbard-Technology.com
    R. Schetty, Proceedings IPC Works Conference. Miami, US (2000)
    V. Glazunova and N. Kudryavtsev, Translated from Zhurnal Prikladnoi Khimii, 36, 543 (1963)
    H. J. Kao, W. C. Wu, S. T. Tsai, C. Y. Liu, J. Electron. Mater., 35, 1885 (2006)
    R. Schetty, Circuit World, 27,2 (2001)
    C. K. Lin, T. H. Lin, Microelectron. Reliab., 48, 1737 (2008)
    Y. J Chen, C. M. Chen, J. Electron. Mater., 38, 415 (2009)
    W. J. Choi and K. N. Tu, J. Appl. Phys., 92, 1 (2002)
    http://ghs.cla.gov.tw/MSDS.asp?SN=67 行政院勞工委員會
    M. Saito, Z H. Sasaki, K. Katou, T. Toba, and T. Homma, J. Electrochem. Soc., 156, E86 (2009)

    QR CODE
    :::