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研究生： 許乃偉
Nau-Wei Hsu
論文名稱： 半極性氮化銦鎵氮化鎵發光二極體特性分析
Luminescence investigation of semi-polar {1-101} and {11-22}InGaN/GaN light emitting diodes
指導教授： 綦振瀛
Jen-Inn Chyi
口試委員:
學位類別： 碩士
Master
系所名稱： 資訊電機學院 - 電機工程學系
Department of Electrical Engineering
畢業學年度： 97
語文別： 中文
論文頁數： 64
中文關鍵詞： 發光二極體 、氮化鎵 、半極性
外文關鍵詞： Light Emitting Diode, GaN, Semi-polar
相關次數： 點閱：8  下載：0 
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    • 有鑒於目前成長於 (0001) 極性晶面之氮化鎵材料發光二極體，因為壓電場產生的量子侷限史塔克效應 ( quantum confined Stark effect, QCSE )而影響量子井的發光效率，非極性或半極性晶面發光二極體已成了眾人鑽研的課題。在本論文中，我們利用條狀側向磊晶成長方式在(0001)藍寶石基板上成長半極性發光二極體結構，並且成功製備半極性發光二極體。此法不但能利用低成本的藍寶石基板獲得半極性發光二極體，同時亦可利用側向磊晶成長機制有效的降低缺陷密度，提高內部量子效率。
    在本研究中，我們分別製備了{1-101}晶面及{11-22}晶面半極性InGaN/GaN多層量子井及發光二極體，希望比較不同半極性晶面量子井中的壓電性電場。由光激發光譜及電激發光譜分析發現，與(0001)晶面相較，{1-101}和{11-22}半極性晶面發光二極體光譜波峰隨激發強度的變化都是較少的，顯示{1-101}和{11-22}量子井中的內建電場相較於(0001)確實是比較小。實驗顯示在高電流操作下，{11-22}晶面半極性發光二極體的發光效率，顯示其未來是頗具發展淺力的。

    Currently commercially available GaN light-emitting diodes (LEDs) are fabricated on the strongly polarized c-plan wurtzite crystal. The internal quantum efficiency has been limited by the Quantum Confined Stark Effect. The growth of non-polar and semi-polar III–nitride materials has therefore attracted great attention in recent years. In this work, stripe patterns with semipolar side facets are obtained by lateral overgrowth on c-plane sapphire substrates using metal-organic chemical vapor deposition. Semi-polar LEDs are also demonstrated. This selective overgrowth technique offers the advantages of reduced dislocations as well as lower internal piezoelectric field.
    InGaN/GaN multiple quantum well LEDs on the semi-polar {1-101} and {11-22} side facets are characterized by photoluminescence (PL) and electroluminescence (EL). Compared to the c-plane LEDs, the luminescence of both semi-polar LEDs shows less dependence on injecting current or exaction power, indicating their lower internal electric field. Besides, the {11-22} semi-polar LEDs exhibit higher internal quantum efficiency under high current injection, manifesting itself a good candidate for high efficiency LEDs.

    第一章 前言1 §1.1 研究背景與動機1 §1.2 內容概要5 第二章 實驗方法與步驟7 §2.1 前言 7 §2.2 一維條紋圖案化基板製備與磊晶成長8 §2.3 半極性氮化鎵/氮化銦鎵多層量子井發光二極體之結構分析11 第三章 半極性氮化鎵/氮化銦鎵多層量子井發光二極體之光激發光譜分析16 §3.1 前言 16 §3.2 電子束激發光譜分析19 §3.3 量子井之壓電場之定性分析25 §3.4 本章結論31 第四章 半極性氮化鎵/氮化銦鎵多層量子井發光二極體之電性及電激發光譜分析32 §4.1 半極性氮化鎵/氮化銦鎵多層量子井發光二極體之製作32 §4.2-1 半極性氮化鎵/氮化銦鎵多層量子井發光二極體之光電特性39 §4.2-2 利用二氧化矽頓化層抑制元件漏電流47 §4.3 發光二極體之壓電場之定性分析56 §4.4 本章結論58 第五章 結論59 參考文獻61

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