探討以超短脈衝雷射沉積技術製作鍺/矽薄膜之表面型態學。主
要以原子力顯微鏡(AFM)作為主要診斷工具，包含了解鍺薄膜成長的
時間演化過程、膜厚與基板溫度對磊晶成長的影響、電漿噴流密度之
角度分布定性分析。
接著，並使用共焦拉曼螢光顯微鏡量測鍺薄膜的拉曼光譜，由拉
曼偏移訊號半高寬判斷鍺薄膜的結晶性，並與原子力顯微鏡觀察到的
表面結構比較。
最後，比較原子力顯微鏡與膜厚量測器(alpha stepper)所量測
的薄膜表面高低起伏程度是否結果一致。並根據alpha stepper 量測
之鍺薄膜平均膜厚值、雷射發數，進一步得到每發雷射所成長的平均
膜厚。
未來工作將參考每發雷射所成長的平均膜厚值，以超短脈衝雷
射沉積技術製作鍺/矽量子點。同時在進行量子點製程時，以中紅外
光控制量子點的大小。以期將尺寸大小相同的量子點應用於量子計算
實驗中。

We show that the islands formed in Stranski-Krastanow (SKI growth of Ge on Si(100) are initially
dislocation-free. Island formation in true SK growth should be driven by strain relaxation in large,
dislocated islands. Coherent SK growth is explained in terms of elastic deformation around the islands,
which partially accommodates mismatch. The limiting critical thickness, h,, of coherent SK islands is
shown to be higher than that for 2D growth. We demonstrate growth of dislocation-free Ge islands on
Si to a thickness of -- 500 A, 50x higher than h, for 2D GeISi epitaxy.

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