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研究生: 蔡文勇
Wen-Yung Tsai
論文名稱: I-Line光阻劑於TFT LCD Array製程之應用及評估
指導教授: 李亮三
Liang-Sun Lee
口試委員:
學位類別: 碩士
Master
系所名稱: 工學院 - 化學工程與材料工程學系
Department of Chemical & Materials Engineering
畢業學年度: 94
語文別: 中文
論文頁數: 85
中文關鍵詞: 微影製程薄膜電晶體液晶顯示器光阻劑
外文關鍵詞: photoresist, photolithography, TFT LCD
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  • 有鑑於光阻劑的文獻上,大部分皆在探討半導體上之應用,關於光阻劑在TFT LCD上的相關文獻相當的少,因此決定本論文之研究方向以I-Line光阻劑於TFT LCD Array製程之應用及評估為主題。
    本論文之研究目的,主要在於結合光阻劑製造商與TFT LCD面板製造廠,在於選擇及評估光阻上建立一個快速導入光阻評估的方法,並依此結論提供TFT LCD面板製造廠建立一個光阻評估的模式(Model)及方法,以縮短業者在光阻的評估及實驗上,以有效降低業者之成本。
    本研究亦使用量產上的設備(如:光學薄膜測厚儀,光阻旋轉塗佈機,光學歩近式曝光機,顯影機…等),來評價A公司Resist A及T公司Resist B兩支光阻,以得到與TFT LCD面板製造廠最接近之研究結果,並將此最佳量產條件應用於TFT LCD面板製造廠,以縮短量產時間,並提升業者之競爭力。
    本研究透過一系列之評估實驗:Spin Coater轉速、光阻塗佈均一性、Swing Curve、Smile Curve、Eth/Eop、曝光能量、顯影時間、Depth of Focus(DOF)、Adhesion、Side Etching…等,可以判斷出T公司Resist B及A公司Resist A兩支光阻,雖然皆適用於TFT LCD面板製造廠,但卻各有其優缺點。
    A公司Resist A及T公司Resist B兩支光阻在本論文研究的總結如下,若在產能的考量下,則建議選擇使用A公司Resist A光阻,若在製程穩定性的考量下,則建議選擇使用T公司Resist B光阻。因此TFT LCD業者該如何選擇光阻,將以工廠之整體經濟效益、成本及利潤考量為主。


    Regarding to researches of Photoresist, mostly these are related to the applications in Semi-conductor, but rare in “TFT LCD Array”. Owing to this, the thesis will be laid on the “Application, and Evaluation of I-Line Photoresist, applied in TFT LCD Array Process”.
    Mainly, the purpose of the research is to construct the efficient methodology, which is to evaluate new Photoresist, and to implement in the mass-production. With the cooperation of Photoresist and Panel makers, the conclusion has offered TFT-LCD maker(s) a new model (method) for the evaluation of Photoresist, which could shorten the evaluation procedure and reduce the evaluation cost.
    In order to secure the most similar experimental results to the realistic TFT-LCD Makers, the actual manufacturing equipments are utilized to evaluate these two Photoresist, respectively are “Company T Resist B” and “Company A Resist A”. The optimal production- parameters had been implemented by TFT-LCD maker, and contributed to the cost-down and competitiveness.
    The research is proved by a serious of evaluations: judged by the “Spin-Speed”,“Coating Uniformity”,“Swing Curve”, “Eth/Eop”,“Exposing Energy”,“Depth of Focus(DOF)”, “Adhesion”、and“Side Etching”, both“Company T Resist B”and ”Company A Resist A”could be adopted by TFT-LCD makers, but each shared their own merits.
    The research, which is related to Photoresist evaluation of “Company T Resist B”and ”Company A Resist A”, is concluded as that: Under the consideration of mass-production, “Company A Resist A” would be the better choice; if pursuing the stable process stability, “Company T Resist B” could show more excellent performance. Thus, for TFT LCD makers, how to choose the ideal Photoresist should depend on the Gross Economic benefits, Cost, and Profits of the whole Fab.

    摘要………………………………………………………………………I Abstract………………………………………………………………II 目錄……………………………………………………………………IV 圖索引………………………………………………………………VII 表索引…………………………………………………………………X 第一章 緒論…………………………………………………………1 1.1 微影製程簡介…………………………………………………2 1.2 光阻劑的發展趨勢……………………………………………5 1.3 光阻劑的簡介及發展…………………………………………5 第二章 原理與文獻………………………………………………7 2.1 微影製程各步驟目的簡要說明………………………………7 2.1.1上底材(Priming)………………………………………7 2.1.2 上光阻劑( Photoresist Coating)………………………8 2.1.3 預烤/軟烤(Pre-Bake/Soft Bake)………………………10 2.1.4 曝光(Exposure)………………………………………11 2.1.5 顯影(Development)……………………………………15 2.1.6 硬烤(Post Bake)………………………………………16 2.2 光阻之特性…………………………………………………16 2.2.1 感度(Sensitivity)………………………………………17 2.2.2 對比(Contrast)…………………………………………19 2.2.3 解析度(Resolution)……………………………………21 2.2.4 熱穩定性(Thermal stability)…………………………23 2.2.5 附著性(Adhesion)……………………………………23 2.2.6 昇華性質(Sublimination)……………………………23 2.2.7 塗佈性…………………………………………………24 2.2.8 剝離去除性(Stripping)………………………………24 2.2.9 製程寬容度(Process latitude)…………………………24 2.3 光阻材料……………………………………………………24 2.3.1 正型光阻材料…………………………………………25 2.3.2 正型光阻的光化學轉換機構…………………………29 2.4 Swing Curve、Spin Curve……………………………………30 第三章 實驗………………………………………………………34 3.1 化學藥品……………………………………………………34 3.2 儀器…………………………………………………………34 3.3 研究方法及步驟……………………………………………35 3.3.1 Spin Curve(Spin speed-Film thickness)實驗…………35 3.3.2 Swing Curve(Film thickness-CD)實驗………………35 3.3.3 Dark Erosion實驗……………………………………36 3.3.4 Eth and Eop實驗…………………………………………36 3.3.4.1 Eth特性探討…………………………………36 3.3.4.2 Eop特性探討…………………………………37 3.3.5 Smile Curve(Focus-CD)實驗…………………………37 3.3.6 Exposure Energy v.s. Developing Time實驗…………37 3.3.7 CD v.s. Developing Time實驗…………………………37 3.3.8 Dry Etch resistance實驗………………………………38 3.3.9 Adhesion實驗…………………………………………38 3.3.9.1 After Development……………………………38 3.3.9.2 After Wet Etching(ITO on Si)…………………38 3.3.9.3 After Wet Etching(SiNx on Si)………………38 3.3.10 Thermal Resistance實驗………………………………39 3.3.11 Stripping Test…………………………………………39 第四章 結果與討論………………………………………………40 4.1 光阻塗佈特性(Spin Curve)之探討………………………40 4.2 Swing Curve(Film thickness-CD)之實驗探討………………43 4.3 Dark Erosion實驗……………………………………………44 4.3.1 Dark Erosion 1實驗……………………………………44 4.3.2 Dark Erosion 2實驗……………………………………47 4.4 Eth and Eop實驗探討…………………………………………51 4.4.1 Eth實驗…………………………………………………51 4.4.2 Eop實驗…………………………………………………52 4.5 Exposure Energy v.s. Developing Time實驗…………………58 4.5.1 T公司Resist B Exposure Energy versus developing time ……………………………………………………58 4.5.2 A公司Resist A Exposure Energy versus developing time time ……………………………………………………59 4.6 CD v.s. Developing Time實驗………………………………61 4.7 Dry Etch resistance實驗………………………………………66 4.7.1 Dry etch resistance for residue Photoresist thickness and loss ratio…………………………………………………66 4.7.2 以SEM觀察Dry etch resistance後的光阻Profile……68 4.8 Adhesion實驗…………………………………………………69 4.8.1 After Development……………………………………69 4.8.2 After Wet Etching(ITO on Si)…………………………71 4.8.3 After Wet Etching(SiNx on Si)…………………………73 4.9 Thermal Resistance實驗………………………………………74 4.10 Stripping test 實驗…………………………………………76 第五章 結論………………………………………………………78 參考文獻………………………………………………………………83

    [1] 李秀玉,“應用賽局理論分析我國薄膜電晶體液晶顯示器產業之競爭策略”,國立交通大學科技管理研究所碩士論文,1999。
    [2] 張東華,“TFT-LCD組立製程之基板配對演算法”,國立交通大學工業工程與管理研究所碩士論文,2005。
    [3] 許兼貴,深紫外線抗反射技術及次100奈米世代電子束直寫阻劑特性研究,國立清華大學原子科學系碩士論文,2001。
    [4] 蕭宏,“半導體製程技術導論”,歐亞書局有限公司,2001。
    [5] M. Hepher, J. Phot. Sci., 12,181,1964。
    [6] 莊達人,“VLSI製造技術”,高立出版社,2002。
    [7] 羅正忠、張鼎張譯,“半導體製程技術導論”,台北市,台灣培生教育出版股份有限公司,2002。
    [8] N. Saburo, U. Takumi, and I. Toshio,“Microlithography fundamentals in semiconductor devices and fabrication technology”, Marcel Dekker, New York, p.65~p.132,1998。
    [9] Introduction to Microlithography Second Edition, Edited by Larry F. Thompson
    , C. Grant Willson, Murrae J. Bowden, Oct. 1993, p.6~p.7。
    [10] W.Spicess, S. Funato, Y. Kinoshita, Y. Nozaki, G. Pawlowski, Microelectronic
    Engineering 41/42,339-342,1998。
    [11] Norman S. Allen, J. Photochemistry and photobiology A: Chemistry 100,
    101-107,1996。
    [12] 龍文安,“積體電路微影製程”,初版,高立出版社,1998。
    [13] 曾伯逸,“含Ketal基化學增幅型光阻劑之合成及特性研究”,國立成功大學碩士論文,2002。
    [14] 莊達人,“VLSI製造技術”,高立出版社,1996。
    [15] 施仁傑,“壓克力系脂環族共聚物之合成及其在光酸增幅型光阻劑之應用研究”,國立成功大學博士論文,2001。
    [16] W. M. Moreau, Semiconductor Lithography, Plenum, New York,1991。
    [17] 25. Y. Chang, and S. M. Sze, ULSI Technology, McGRAW-HILL, NY,1996
    [18] D. J. Elliott, “Integrated Circuit Fabrication Technology”, 2ndEd., McGraw Hill,1989。
    [19] E. Fadda, C. Clariss, and P. J. Paniez, Microelec. Eng., 30, p.593,1996。
    [20] Takahiro Matsuo, Masayuki Endo, Shigeyasu Mori et al., “polymer design in
    surface modification resist process for ArF lithography”, proc. SPIE, 3333, pp.2,1998。
    [21] E. Gogolides, and M. Hatzakis, Microelec. Eng., 30, pp.267,1996。
    [22] Hideki Tomozawa, Yoshihiro Saida, Yoshiaki Ikenoue, Fumio Murai, Yasunori Suzuki, Tsutomu Tawa, and Yoshihiro Ohta, J. Photopolym. Sci. Technol., Vol. 9, No.4, pp707, 1996。
    [23] B. Bohumil, K. Jaroslav, and J. Zachoval, “Resists in microlithography and printing”, Elsevier, New York, 1993。
    [24] L. F. Thompson, C. G. Wilson, and M. J. Bowden,“Introduction to Microlithography”, 2nd Edit, American Chemical Society, Washington, 1994。
    [25] 陳錫桓,“光學,近代物理”,中央圖書,p.138~p.140,1983。
    [26] E. Kareh, ASET, “Fundamental of Semiconductor Processing Technologies”,2000。
    [27] B. J. Lin , SPIE proceedings, Vol. 1463, p.42,1991。
    [28] 張俊彥,鄭晃忠,積體電路製程及設備技術手冊,初版,經濟部技術處發行,台北,1997。
    [29] D. A. Robert, O. Juliann, and E. L. Carl, Microlithography World, Winter, p. 5~p.8,1999。
    [30] D. D. Wolf, G. H. Stefan, and C. Gunter, Microlithography World, Spring, p2~p.6,1999。
    [31] L. F. Thompson, C. G. Wilson, and M. J. Bowden,“Introduction to Microlithography”, ACS Symposium Series 219, ACS, Washington, 87,1983。
    [32] C.A.Mack , “Depth of focus”, Microlithography world , (1995) pp.20。
    [33] J. F. Chen, “Mask Tool TM Workshop by Microunity”, Dec. 12,1997。
    [34] 李柏毅,”正型鹼性水溶液顯影感光性聚合亞醯胺材料之研究”,國立成功大學碩士論文,2002。
    [35] 曾俊傑,”環狀脂環族高分子之合成及其在化學增幅正型光阻劑之應用研究,2003。
    [36] 劉瑞祥,“感光性高分子”,復文書局,p.52-p.97,1998。
    [36] Katsuji Douki, Tour Kajita, and Shin-ichiro Iwanaga, SPIE, Vol. 3333, p.384,1998。
    [38] Stanlry F. Wanat, M. Dalil Rahamn, Sunit s. Dixit, Ping-Hung Lu, Douglas S. Mckenzie and Michelle M. Cook, SPIE, Vol.3333, p.1092,1998。
    [39] E. Tegou, E. Gogolides, and M. Hatzakis, Microelectronic Eng., 35, p.141~ p.144,1997。
    [40] K. Miyagawa, K. Naruse, and S. Ohnishi, Progress in Organic Coating, 42, p.20~p.28,2001。
    [41] D. Meyerhofer, IEEE Trans, Electr. Dev. ED-27, 921,1980。
    [42] W. Chen and H. Ahmed,. Appl. Phys. Lett. 62 (13), 1499,1993。
    [43] P. Rai-Choudhury, “ Handbook of Microlithography, Micromachining, and Microfabrication, Volume 1: Microlithography,” ,1997。
    [44] T. A. Brunner, “ Optimization of Optical Properties of Resist Processes , ” Proc. SPIE 1466, pp. 297-308,1991。

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